Temperature dependence of Ohmic contacts of In0.83Ga0.17As photodiodes and its correlation with interface microstructure

Abstract

The temperature-dependent electrical properties of Au Ohmic contacts of In 0.83 Ga 0.17 As photodiodes were systematically investigated in the temperature range 163-373 K. For two annealed sample, the novel temperature behavior of the specific contact resistivity q sc was observed and exhibits similarity to that of 'metal,' describable by a T 2.01 and T 2.19 dependence. The microscopic interfacial analysis from transmission electron microscope (TEM) indicated that the Au protrusions penetrating into the contact layer, with a density of 9 9 10 7 and 2.0 9 10 8 cm -2 , respectively, could cause this phenomenon by acting as the more efficient conduction channels. By fabricating the extended wavelength In 0.83-Ga 0.17 As photodiode and deducing the series resistance from the current-voltage-temperature (I-V-T) characteristics, it is proved that the series resistance is mainly caused by the contact resistance of the metal-semiconductor (MS) interface. The results are very meaningful for the application of the extended wavelength In 0.83 Ga 0.17 As photodiode.

Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance

“…To analyze this interesting behavior, we fit the temperature-dependent contact resistivity ( ) by power law of in Figure S4 , where the power index, , of +3.8 is obtained. The results show that the contact displays a typical behavior of “metals,” since the resistivity of metals follow the power law of with 1 < γ < 5 43 . It is for the first time that a metallic contact of BP transistors is demonstrated, which potentially overcomes the bottleneck of contact issue in BP devices.…”