LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

Addendum: Deep emission band at GaInP/GaAs interface

“…It was first proposed that a thin GaInAsP quantum well with thickness of less than 10 Å was formed in the GaInP/ GaAs interface. 2 This narrow GaInAsP well acts like a deep trap for carriers whose recombination produces the deep emission. In a more recent article, Liu et al 6 proposed that this deep emission was due to the recombination of electrons in the GaInP conduction band with holes in the GaAs valence band.…”

“…[1][2][3][4][5] Its energy ranges from 1.35 to 1.46 eV. Various models have been proposed to explain its origin in MOVPE grown GaInP/GaAs QW structures.…”

High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties

“…Metalorganic vapor phase epitaxy (MOVPE) is one of the most important methods for the growth of the epitaxial wafers used for fabricating those devices, but it is known that unexpected transition layers are formed at As/P heterointerfaces during MOVPE growth [5][6][7][8][9][10][11][12][13][14][15][16][17][18]. These layers can form an undesired barrier or well in band gap profiles, or can cause a gradual heterointerface, that would result in undesired device properties such as low electron mobility in HEMTs or low current gain in HBTs.…”

“…Low-temperature photoluminescence (PL) has been widely used for determining the transition layers [5][6][7][8][9][10][11][12][13][14]. X-ray diffraction (XRD) [15,16] or X-ray crystal truncation rod (CTR) measurement [17] has been also used for evaluating the interface condition of quantum-well (QW) structure.…”

High Pressure Photoluminescence Study of the GaAs/Partially Ordered GaInP Interface

“…This is particularly true when considering the lack of a clear relationship between the growth conditions of metalorganic vapor phase epitaxy (MOVPE) and optical properties of GaAs/partially ordered GaInP heterostructures. This is often illustrated by the undesirable dominance of the intense and broad emission bands in the range from 1.35 to 1.46 eV instead of the emission from the GaAs quantum well (QW) structures [1][2][3][4][5][6]. In such samples emission from the quantum well is only seen if intermediate GaP layers are grown between the GaAs and GaInP and is otherwise masked by anomalous bands at around 1.46 eV [1,2,5,6].…”