Addendum: Deep emission band at GaInP/GaAs interface

Kwok, S. H.; Yu, P.Y.; Uchida, K.; Arai, Takayuki

doi:10.1063/1.365686

Cited by 9 publications

(4 citation statements)

References 7 publications

(13 reference statements)

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“…Peak A would have a pres- sure dependence similar to that of the partially ordered GaInP layer. Using lower excitation intensities below those used in an earlier study [5] confirms that this is clearly the case and gives further evidence of a type II band alignment.…”

supporting

confidence: 83%

Photoluminescence studies of GaAs/partially ordered GaInP quantum wells grown by metalorganic vapor phase epitaxy

Kobayashi

Tomoda

Prins

et al. 2003

Physica Status Solidi (b)

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We report the results of a study on GaAs/partially ordered Ga 0.5 In 0.5 P quantum wells using up-converted photoluminescence (UPL), in which a sample emits photons with an energy (1.89 eV) higher than that of the excitation photon (1.58 eV), together with the normal photoluminescence (PL) excited at a photon energy higher than that of the GaInP band gap and at high pressures up to ~5 GPa. Both the ~1.46 eV emission and the UPL observed in this work provide new evidence of a type II band alignment. IntroductionIt is important to know the band alignment and offset at the GaAs/Ga 0.5 In 0.5 P interface for applications such as in laser diodes and heterojunction bipolar transistors. However, because of the imperfect ordering in currently available GaInP grown by metalorganic vapor phase epitaxy (MOVPE), details of band alignment between GaAs and GaInP and the effects of ordering on optical properties are still not fully understood. In the GaAs/GaInP quantum well (QW) structures, undesirable emission bands at 1.35-1.46 eV often dominate instead of the emission from the GaAs QW [1−5], but the introduction of thin GaP layers between the GaAs and GaInP restores this emission. Based on these observations the type II band alignment has been proposed [3]. Driessen [6] and Su et al. [7] reported independently that GaAs/partially ordered GaInP samples exhibited up-converted photo-luminescence (UPL), in which a sample emits photons with an energy higher than that of the excitation photon. Driessen assumed that the band offset in the QW samples was of type I and suggested that Auger processes occurring near the interface were responsible for the UPL. Based on the observed up-conversion efficiency, Su et al. suggested a type II band alignment with a small conduction band offset in single heterostructure samples and proposed a two-step two-photon absorption (TPA) mechanism.In this paper we report UPL spectra at 9 K of GaAs/GaInP single QW structures, as well as normal PL spectra at 77 K and at pressures up to about 5 GPa. The samples studied here contain all the possible combinations of the intermediate GaP layer to identify the role of GaP for optical properties. We investigate the characteristics of the UPL and observe distinct effects of the excitation photon energy on the various PL properties. We find that all samples with a thin GaP layer show UPL at ~1.89 eV. No UPL can be observed in the sample with two thin GaP layers. Both the ~1.46 eV emission and the UPL observed in this work provide new evidence of a type II band alignment.

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supporting

confidence: 83%

Photoluminescence studies of GaAs/partially ordered GaInP quantum wells grown by metalorganic vapor phase epitaxy

Kobayashi

Tomoda

Prins

et al. 2003

Physica Status Solidi (b)

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“…In such an alignment the 1.46 eV peak due to the spatially indirect transitions, GaInP(G c )-GaAs(G v ), at the interface can be made possible, and would have a pressure dependence similar to that of partially ordered GaInP layer. Using low excitation intensities (below those used in an earlier study [6]) confirms that this is clearly the case and gives new evidence of a type-II band alignment.…”

Section: Resultssupporting

confidence: 61%

“…The GaInP layers used in this study have a smaller band gap than that of the disordered GaInP (1.98 eV) and are partially ordered [5,6,[9][10][11][12][13]. The application of a thin GaP layer at both the upper and lower interfaces is effective both in achieving emission from the GaAs well and suppressing the 1.42-1.46 eV band.…”

Section: Resultsmentioning

confidence: 99%

“…This is particularly true when considering the lack of a clear relationship between the growth conditions of metalorganic vapor phase epitaxy (MOVPE) and optical properties of GaAs/partially ordered GaInP heterostructures. This is often illustrated by the undesirable dominance of the intense and broad emission bands in the range from 1.35 to 1.46 eV instead of the emission from the GaAs quantum well (QW) structures [1][2][3][4][5][6]. In such samples emission from the quantum well is only seen if intermediate GaP layers are grown between the GaAs and GaInP and is otherwise masked by anomalous bands at around 1.46 eV [1,2,5,6].…”

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confidence: 99%

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High Pressure Photoluminescence Study of the GaAs/Partially Ordered GaInP Interface

Kobayashi¹,

Inoue²,

Prins³

et al. 2001

phys. stat. sol. (b)

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Excitation and pressure effects on low temperature photoluminescence from GaAs/GaInP heterostructures

Nagata

Kobayashi

Prins

et al. 2004

Physica Status Solidi (b)

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We report for the first time the results of a study of 11 K photoluminescence (PL) measurements of metalorganic vapor phase epitaxy grown GaAs/GaInP quantum wells at pressures up to ~5 GPa and examine the effects of laser excitation energy and intensity. The use of low temperature allows us to study the true nature of a peak at ~1.46 eV, which dominates instead of the GaAs QW emission, even at very low excitation intensities to pressures well above the Γ-X crossover in GaInP. Our results suggest that the ~1.46 eV emission is a spatially indirect transition of electrons and holes separated at the interface in a type-II band alignment.

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Addendum: Deep emission band at GaInP/GaAs interface

Abstract: We have performed high pressure photoluminescence studies of the deep emission band in GaInP/GaAs quantum well. Our results suggest that this peak is related to donor-acceptor pair transitions in the GaAs well.

Cited by 9 publications

References 7 publications

Photoluminescence studies of GaAs/partially ordered GaInP quantum wells grown by metalorganic vapor phase epitaxy

Photoluminescence studies of GaAs/partially ordered GaInP quantum wells grown by metalorganic vapor phase epitaxy

High Pressure Photoluminescence Study of the GaAs/Partially Ordered GaInP Interface

Excitation and pressure effects on low temperature photoluminescence from GaAs/GaInP heterostructures

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