High Pressure Photoluminescence Study of the GaAs/Partially Ordered GaInP Interface

Kobayashi, Toshihiko; Inoue, Koichiro; Prins, A. D.; Uchida, K.; Nakahara, Jun

doi:10.1002/1521-3951(200101)223:1<123::aid-pssb123>3.0.co;2-i

Cited by 3 publications

(1 citation statement)

References 15 publications

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“…Based on the pressure dependence results, they suggested that the 'deep emission' peak is related to DAP transitions. However, later in [33,34] using a low temperature, they suggested that the 1.46 eV emission is a spatially indirect transition of the electrons and holes, separated at the interface in a type-II band alignment. Nevertheless, at the same time Ding et al [35] reported the observation of an anomalously large blueshift of an apparent DAP transition peak in compensation-doped coupled QWs.…”

Section: Introductionmentioning

confidence: 99%

Optical absorption in GaAs quantum wells caused by donor–acceptor pair transitions

Kazaryan¹,

Kostanyan²,

Sarkisyan³

2007

J. Phys.: Condens. Matter

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Optical absorption related to donor–acceptor pair transitions in GaAs quantum wells was theoretically investigated. The donor and acceptor ground state wavefunctions and energies were obtained using variational method in the frames of the effective mass approximation. The absorption coefficient related to acceptor-to-donor transition was calculated. The spreading of the absorption curve as a result of averaging over impurity distances was taken into account. The character of the dependence of the absorption coefficient on both quantum well thickness and impurity concentration was determined. The blueshift in the absorption spectra was theoretically investigated. Comparison with available experimental data was made.

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Section: Introductionmentioning

confidence: 99%

Optical absorption in GaAs quantum wells caused by donor–acceptor pair transitions

Kazaryan¹,

Kostanyan²,

Sarkisyan³

2007

J. Phys.: Condens. Matter

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Photoluminescence studies of GaAs/partially ordered GaInP quantum wells grown by metalorganic vapor phase epitaxy

Kobayashi

Tomoda

Prins

et al. 2003

Physica Status Solidi (b)

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We report the results of a study on GaAs/partially ordered Ga 0.5 In 0.5 P quantum wells using up-converted photoluminescence (UPL), in which a sample emits photons with an energy (1.89 eV) higher than that of the excitation photon (1.58 eV), together with the normal photoluminescence (PL) excited at a photon energy higher than that of the GaInP band gap and at high pressures up to ~5 GPa. Both the ~1.46 eV emission and the UPL observed in this work provide new evidence of a type II band alignment. IntroductionIt is important to know the band alignment and offset at the GaAs/Ga 0.5 In 0.5 P interface for applications such as in laser diodes and heterojunction bipolar transistors. However, because of the imperfect ordering in currently available GaInP grown by metalorganic vapor phase epitaxy (MOVPE), details of band alignment between GaAs and GaInP and the effects of ordering on optical properties are still not fully understood. In the GaAs/GaInP quantum well (QW) structures, undesirable emission bands at 1.35-1.46 eV often dominate instead of the emission from the GaAs QW [1−5], but the introduction of thin GaP layers between the GaAs and GaInP restores this emission. Based on these observations the type II band alignment has been proposed [3]. Driessen [6] and Su et al. [7] reported independently that GaAs/partially ordered GaInP samples exhibited up-converted photo-luminescence (UPL), in which a sample emits photons with an energy higher than that of the excitation photon. Driessen assumed that the band offset in the QW samples was of type I and suggested that Auger processes occurring near the interface were responsible for the UPL. Based on the observed up-conversion efficiency, Su et al. suggested a type II band alignment with a small conduction band offset in single heterostructure samples and proposed a two-step two-photon absorption (TPA) mechanism.In this paper we report UPL spectra at 9 K of GaAs/GaInP single QW structures, as well as normal PL spectra at 77 K and at pressures up to about 5 GPa. The samples studied here contain all the possible combinations of the intermediate GaP layer to identify the role of GaP for optical properties. We investigate the characteristics of the UPL and observe distinct effects of the excitation photon energy on the various PL properties. We find that all samples with a thin GaP layer show UPL at ~1.89 eV. No UPL can be observed in the sample with two thin GaP layers. Both the ~1.46 eV emission and the UPL observed in this work provide new evidence of a type II band alignment.

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Excitation and pressure effects on low temperature photoluminescence from GaAs/GaInP heterostructures

Nagata

Kobayashi

Prins

et al. 2004

Physica Status Solidi (b)

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We report for the first time the results of a study of 11 K photoluminescence (PL) measurements of metalorganic vapor phase epitaxy grown GaAs/GaInP quantum wells at pressures up to ~5 GPa and examine the effects of laser excitation energy and intensity. The use of low temperature allows us to study the true nature of a peak at ~1.46 eV, which dominates instead of the GaAs QW emission, even at very low excitation intensities to pressures well above the Γ-X crossover in GaInP. Our results suggest that the ~1.46 eV emission is a spatially indirect transition of electrons and holes separated at the interface in a type-II band alignment.

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High Pressure Photoluminescence Study of the GaAs/Partially Ordered GaInP Interface

Cited by 3 publications

References 15 publications

Optical absorption in GaAs quantum wells caused by donor–acceptor pair transitions

Optical absorption in GaAs quantum wells caused by donor–acceptor pair transitions

Photoluminescence studies of GaAs/partially ordered GaInP quantum wells grown by metalorganic vapor phase epitaxy

Excitation and pressure effects on low temperature photoluminescence from GaAs/GaInP heterostructures

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