Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Zhang, Siqing; Liu, Yan; Zhou, Jiuren; Ma, Meng; Gao, Anyuan; Zheng, Binjie; Li, Lingfei; Su, Xin; Han, Genquan; Zhang, Jincheng; Shi, Yi; Wang, Xiaomu; Hao, Yue

doi:10.1186/s11671-020-03384-z

Cited by 35 publications

(20 citation statements)

References 59 publications

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“…25 It is noted here that the observed hysteresis in the I ds − Vgs curves of MoS 2 /HZO FETs that originated from the fixed charge and ferroelectricity in the HZO nanolayer has the opposite direction, which might induce neutralization of the hysteresis. 34 However, in our case, as observed in Fig. 3(b), the clockwise hysteresis is still dominated by charge trapping in the transistor.…”

Section: Resultssupporting

confidence: 49%

Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

et al. 2021

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Field effect transistors (FETs) using two-dimensional molybdenum disulfide (MoS 2 ) as the channel material has been considered one of the most potential candidates for future complementary metal-oxide-semiconductor technology with low power consumption. However, the understanding of the correlation between the device performance and material properties, particularly for devices with scaling-down channel lengths, is still insufficient. We report in this paper back-gate FETs with chemical-vapor-deposition grown and transferred MoS 2 and Zr doped HfO 2 ((Hf,Zr)O 2 , HZO) high-k dielectric gates with channel lengths ranging from 10 to 30 μm with a step of 5 μm. It has been demonstrated that channels with the length to width ratio of 0.2 lead to the most superior performance of the FETs. The MoS 2 /HZO hybrid FETs show a stable threshold voltage of ∼1.5 V, current on/off ratio of >10 4 , and field effect mobility in excess of 0.38 cm 2 V −1 s −1 . The impact of the channel lengths on FET performance is analyzed and discussed in depth. A hysteresis loop has been observed in the I ds − Vgs characteristics of the hybrid FETs, which has been further studied and attributed to the charge effect at the interfaces. The HZO films show a relatively weak ferroelectric orthorhombic phase and thus serve mainly as the high-k dielectric gate. Charge trapping in the HZO layer that might induce hysteresis has been discussed. Our results show that MoS 2 /HZO hybrid FETs possess great potential in future low power and high-speed integrated circuits, and future work will focus on further improvement of the transistor performances using ferroelectric HZO films and the study of devices with even shorter MoS 2 channels.

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Section: Resultssupporting

confidence: 49%

Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

et al. 2021

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“…Compared with the crystalline counterpart, the amorphous ferroelectric-like films have significant advantages in reduced process temperature and leakage current. Thus, there are mass researches on FeFETs with amorphous gate insulator for the non-volatile memory and analog synapse applications [27,[30][31][32][33][34]. However, the systematical investigation on one-transistor ZrO x -based NCFET has not been carried out.…”

Section: Introductionmentioning

confidence: 99%

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

et al. 2021

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Here we report the ZrOx-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V VGS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrOx/TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO2 and ZrOx films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancement of IDS and sub-60 subthreshold swing. 5 nm ZrOx-based NCFETs achieve a clockwise hysteresis of 0.24 V, lower than 60 mV/decade SS and an 12% IDS enhancement compared to the control device without ZrOx. The suppressed NC effect of Al2O3/HfO2 NCFET compared with ZrOx NCFET is related to the partial switching of oxygen vacancy dipoles in the forward sweeping due to negative interfacial dipoles at the Al2O3/HfO2 interface.

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“…Besides charge storage capability, endurance and reliability of memory are also essential to the applications of memory cells. Field-effect transistors based on 3D ferroelectric thin films and MoS 2 can provide nonconstructive memory capabilities with stable electronic states and interfacial qualities. ,, Figure S6 shows the repeatability of the pulse-magnitude-controlled memory functionalities and the endurance performance upon fixed periodic ON/OFF pulses of over 1500 cycles. Sample cycles are selected randomly to extract the readout charges after removing writing and erasing pulses, which indicate highly reproducible pulse-magnitude-controlled electrical states (Figure S6c,d).…”

Section: Resultsmentioning

confidence: 99%

Solid-Ionic Memory in a van der Waals Heterostructure

Chen¹,

Guo

Wang³

et al. 2022

ACS Nano

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Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 106 (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 104 A/W) and photodetectivity (2.12 × 1013 Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.

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Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Cited by 35 publications

References 59 publications

Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

Solid-Ionic Memory in a van der Waals Heterostructure

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