Low-Voltage, Low-Loss, Multi-Gb/s Silicon Micro-Ring Modulator based on a MOS Capacitor

Campenhout, Joris Van; Pantouvaki, Marianna; Verheyen, Peter; Selvaraja, Shankar Kumar; Lepage, Guy; Yu, Hui; Lee, W.; Wouters, Jan; Goossens, D.; Moelants, M.; Bogaerts, Wim; Absil, P.

doi:10.1364/ofc.2012.om2e.4

Cited by 35 publications

(21 citation statements)

References 4 publications

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“…A ring modulator based on a carrier accumulation MOS diode with 5 nm gate oxide has demonstrated 130 pm/V resonance shift [53]. The device had 1.7 GHz bandwidth limited by its large capacitance (320 fF) and resistance (380 Ω).…”

Section: Demonstrated Ring Modulators In Simentioning

confidence: 99%

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Krishnamoorthy

Shubin

et al. 2013

IEEE J. Select. Topics Quantum Electron.

149

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Silicon photonics is the most promising pathway to achieve >10 Tb/s off-chip I/O bandwidth required by nextgeneration high-performance computing and switching systems. Ring resonator modulators offer the advantages of small footprint, low power, high efficiency, low loss, high speed, and CMOS compatibility for silicon photonic links. This paper presents an indepth discussion of practical microring modulators in silicon, covering their performance metrics, design tradeoffs, optimization, p-n junction geometries, complex ring configurations, and tuning solutions. Various demonstrated Si ring modulators are reviewed and potential future developments are briefly discussed.

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Section: Demonstrated Ring Modulators In Simentioning

confidence: 99%

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Krishnamoorthy

Shubin

et al. 2013

IEEE J. Select. Topics Quantum Electron.

149

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“…Similar to the depletion modulators of the previous section, the static performance can be measured as shown in Figure 7 below. Using this structure, we are able to demonstrate 7dB at insertion loss of 5dB for these devices, for 1Vpp drive signal [2]. The dynamic performance of this structure is limited at 3Gb/s, because of the large parasitic capacitance and resistance, but device design and implantation optimization is expected to significantly improve this.…”

Section: Ring Modulatorsmentioning

confidence: 98%

“…The first sequence etches the full poly-Si and oxide layer, and removes also 70nm of the underlying Si, as indicated in XSEM in Figure 1 (a). In this level, low loss couplers can be defined [1], as well as compact MOS ring modulators [2]. In the second sequence, the poly-silicon layer is etched, stopping on the oxide underneath.…”

Section: Process Overview Advanced Passives Baseline Processmentioning

confidence: 99%

Co-integration of Ge detectors and Si modulators in an advanced Si photonics platform

et al. 2012

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“…While high-gain III-V layers provide efficient light amplification, the highindex-contrast SOI architectures allows for the low-footprint implementation of optical functions constituting the whole silicon photonics toolbox such as optical resonators and filters [10], input/ouput (I/O) couplers [11], [12], high-speed modulators [13], [14], Si-Ge photodiodes [15], as well as wavelength (de)multiplexers [16]. This results in a win-win approach where mature high-throughput CMOS-technology is combined with the excellent optoelectronic behavior of III-V materials.…”

Section: Bridging Photonics To Silicon Maturitymentioning

confidence: 99%

High-contrast gratings for long-wavelength laser integration on silicon

et al. 2014

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Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ 100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.The staggering growth witnessed during the past decade in the volume of data traffic running through our telecommunication infrastructures is fast reaching the performance bottleneck of copper-based interconnects of standard electronics circuits and systems in present computing nodes and datacenters. In this sense, the onset of the social networks phenomenon as well as the exponential increase in richer multimedia content exchange over the net are contributing to call into question the capability of existent datacom backbones to withstand such relentlessly growing bit stream. Moreover, continuing shrinking microelectronics nodes as long-term solution puts at risk its technological as well as economic viability, as the pin/interconnects density is limited by the shrinking available space over rack and board areas, while heat management proves harder and costs for cooling systems are ballooning in present datacenter architectures.Within such scenario, the emerging solution of adopting power-efficient broadband optical interconnects capable to face up the mounting demand for data transmission bandwidth as well as aiming at increasing computing capabilities has gained momentum in the last 10 years within both research and industr...

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Low-Voltage, Low-Loss, Multi-Gb/s Silicon Micro-Ring Modulator based on a MOS Capacitor

Cited by 35 publications

References 4 publications

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Co-integration of Ge detectors and Si modulators in an advanced Si photonics platform

High-contrast gratings for long-wavelength laser integration on silicon

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