Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm

Salhi, A.; Rouillard, Y.; Pérona, A.; Grech, P.; Garcia, M.; Sirtori, Carlo

doi:10.1088/0268-1242/19/2/024

Cited by 39 publications

(16 citation statements)

References 6 publications

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“…After changing the composition for Ga 0.72 In 0.28 As 0.35 Sb 0.65 case the AR coefficient was reduced to about one third and the threshold current is also reduced of 16 mA in comparison with the Ga 0.65 In 0.35 As 0.15 Sb 0.85 structure. At the same time for the new structure the improvement in the characteristic temperature is ∆T 0 = 16 K, furnishing the theoretical value T 0 = 96 K that is comparable to the best ones reported for type-I GaInAsSb/AlGaAsSb lasers emitted near 2.3 µm [11].…”

Section: Resultssupporting

confidence: 81%

Outcome of refinement of the thermal sensitivity Ga _0.65 In _0.35 As _0.15 Sb _0.85 /GaSb MQW laser

Mashoshyna

Sukhoivanov

Joullié

et al. 2005

phys. stat. sol. (c)

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We discuss an optimization procedure for type-II mid-IR lasers. The QW layer composition was used as the variable parameter. The proposed design combines the suppression of the Auger recombination processes and the improvement of the electron and hole confinement, the characteristic temperature T 0 of the strained Ga 1-x In x As y Sb 1-y / GaSb MQW laser during laser operation in the 250 -350 K temperature range.

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Section: Resultssupporting

confidence: 81%

Outcome of refinement of the thermal sensitivity Ga _0.65 In _0.35 As _0.15 Sb _0.85 /GaSb MQW laser

Mashoshyna

Sukhoivanov

Joullié

et al. 2005

phys. stat. sol. (c)

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“…1) of the GaInAsSb/AlGaAsSb diode laser was prepared at Montpellier by molecular beam epi− taxy (MBE) and consists of three GaInAsSb/AlGaAsSb quantum wells, sandwiched between AlGaAsSb barrier lay− ers with varied composition, GaSb substrate and GaSb con− tact and buffer layers [38,39]. In order to obtain mono−mode emission at the desired wavelength, the ridged−stripe contact structure was pro− vided with a passive distributed feedback (DFB) element by electron lithography and the chip was mounted and encap− sulated at the Nanoplus−Nanosystems and Technologies GmbH, Oberer Kirchberg, Gerbrunn, Germany.…”

Section: Mqw -Gainassb/algaassb Diode Laser (Operating At Temperaturementioning

confidence: 99%

Infrared diode laser spectroscopy

Civiš

Cihelka²,

Matulková

2010

Opto-Electronics Review

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Three types of lasers (double-heterostructure 66 K InAsSb/InAsSbP laser diode, room temperature, multi quantum wells with distributed feedback (MQW with DFB) (GaInAsSb/AlGaAsSb based) diode laser and vertical cavity surface emitting lasers (VCSELs) (GaSb based) have been characterized using Fourier transform emission spectroscopy and compared. The photoacoustic technique was employed to determine the detection limit of formaldehyde (less than 1 ppmV) for the strongest absorption line of the v3 + v5 band in the emission region of the GaInAsSb/AlGaAsSb diode laser. The detection limit (less than 10 ppbV) of formaldehyde was achieved in the 2820 cm−1 spectral range in case of InAsSb/InAsSbP laser (fundamental bands of v1, v5). Laser sensitive detection (laser absorption together with high resolution Fourier transform infrared technique including direct laser linewidth measurement, infrared photoacoustic detection of neutral molecules (methane, form-aldehyde) is discussed.Additionally, very sensitive laser absorption techniques of such velocity modulation are discussed for case of laser application in laboratory research of molecular ions. Such sensitive techniques (originally developed for lasers) contributed very much in identifying laboratory microwave spectra of a series of anions (C6H−, C4H−, C2H−, CN−) and their discovery in the interstellar space (C6H−, C4H−).

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“…Low threshold, high power lasers operating continuous wave (CW) at room temperature (RT) have been realised in recent years, as interest in this material system has grown [2]. CW threshold current densities of 34 A cm -2 per QW for a device with λ ~ 2.38 µm and 58 A cm -2 per QW for a device emitting at 2.24 µm have been recorded at room temperature [3,4] and output powers of over 500 mW have been achieved with the application of anti-reflection coatings [5,6]. However, whilst these devices exhibit good performance, their threshold currents remain temperature sensitive.…”

Section: Introductionmentioning

confidence: 99%

Carrier recombination mechanisms in mid‐infrared GaInAsSb quantum well lasers

O’Brien¹,

Sweeney

Adams

et al. 2006

Physica Status Solidi (b)

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Hydrostatic pressure and spontaneous emission techniques have been used to examine the important recombination mechanisms in type-I GaInAsSb/GaSb quantum well lasers. High pressure results indicate that Auger recombination dominates the threshold current of 2.11 mu m and 2.37 mu m devices and is the origin of their temperature sensitivity around room temperature. While the characteristics of the 2.37 mu m devices are much improved by the suppression of the CHSH Auger process, since its spin-orbit splitting energy is greater than its band gap, other important Auger processes such as CHHL and CHCC persist. In the larger band gap 2.11 mu m devices, an increase in threshold current with pressure is observed suggesting that CHSH Auger is present in these devices at atmospheric pressure and contributes to performance degradation at these shorter wavelengths

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Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm

Abstract: We report on low-threshold high-power quantum well diode lasers emitting near 2.3 µm based on the GaInAsSb/AlGaAsSb system. The threshold current density per quantum well is as low as 63 A cm −2 . A maximum output power of 540 mW at 293 K in the continuous wave regime has been achieved.

Cited by 39 publications

References 6 publications

Outcome of refinement of the thermal sensitivity Ga _0.65 In _0.35 As _0.15 Sb _0.85 /GaSb MQW laser

Outcome of refinement of the thermal sensitivity Ga _0.65 In _0.35 As _0.15 Sb _0.85 /GaSb MQW laser

Infrared diode laser spectroscopy

Carrier recombination mechanisms in mid‐infrared GaInAsSb quantum well lasers

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Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm

Cited by 39 publications

References 6 publications

Outcome of refinement of the thermal sensitivity Ga 0.65 In 0.35 As 0.15 Sb 0.85 /GaSb MQW laser

Outcome of refinement of the thermal sensitivity Ga 0.65 In 0.35 As 0.15 Sb 0.85 /GaSb MQW laser

Infrared diode laser spectroscopy

Carrier recombination mechanisms in mid‐infrared GaInAsSb quantum well lasers

Contact Info

Product

Resources

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Outcome of refinement of the thermal sensitivity Ga _0.65 In _0.35 As _0.15 Sb _0.85 /GaSb MQW laser

Outcome of refinement of the thermal sensitivity Ga _0.65 In _0.35 As _0.15 Sb _0.85 /GaSb MQW laser