Carrier recombination mechanisms in mid‐infrared GaInAsSb quantum well lasers

O’Brien, Kevin; Sweeney, S. J.; Adams, A.R.; Jin, S. R.; Ahmad, C. N.; Murdin, B. N.; Salhi, A.; Rouillard, Y.; Joullié, A.

doi:10.1002/pssb.200672573

Cited by 18 publications

(7 citation statements)

References 17 publications

(19 reference statements)

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“…While carrier leakage is expected to have some effect on the threshold current density, its contribution must be secondary to that of CHCC recombination in order to explain the strong pressure dependence of the threshold current density. Hydrostatic pressure measurements on type-I GaInAsSb lasers operating at 2.37 μm and 2.11 μm have been reported in the literature, in each case identifying an Auger process as the dominant non-radiative recombination pathway [51], [52]. The hydrostatic measurements reported here, supplemented with the literature measurements, offer a unique opportunity to analyze the wavelength dependence of the efficiency limiting mechanisms in the 2-3 μm range.…”

Section: Hydrostatic Pressurementioning

confidence: 72%

Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

Eales

Marko

Ikyo

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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Abstract-The efficiency limiting mechanisms in type-I GaInAsSb-based quantum well (QW) lasers, emitting at 2.3 µm, 2.6 µm and 2.9 µm, are investigated. Temperature characterization techniques and measurements under hydrostatic pressure identify an Auger process as the dominant non-radiative recombination mechanism in these devices. The results are supplemented with hydrostatic pressure measurements from three additional type-I GaInAsSb lasers, extending the wavelength range under investigation from 1.85-2.90 μm. Under hydrostatic pressure, contributions from the CHCC and CHSH Auger mechanisms to the threshold current density can be investigated separately. A simple model is used to fit the non-radiative component of the threshold current density, identifying the dominance of the different Auger losses across the wavelength range of operation. The CHCC mechanism is shown to be the dominant non-radiative process at longer wavelengths (> 2 μm). At shorter wavelengths (< 2 μm) the CHSH mechanism begins to dominate the threshold current, as the bandgap approaches resonance with the spin-orbit split-off band.

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Section: Hydrostatic Pressurementioning

confidence: 72%

Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

Eales

Marko

Ikyo

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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“…The accuracy of the model is limited by the availability of only approximate models for dopant-density-dependent band-gap narrowing and the temperature dependence of Auger recombination, neither of which have been experimentally characterized in the GaInAsSb material system. 12,13 In our model the band gap of Ga .85 In . 15 As .13 Sb .87 is narrowed according to the JainRaulston parameters for GaSb 14 and the Auger coefficient is taken to be temperature independent.…”

mentioning

confidence: 99%

Design for enhanced thermo-electric pumping in light emitting diodes

Gray

Santhanam

Ram

2013

Applied Physics Letters

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We present a strategy for optimization of thermo-electric pumping in light emitting diodes (LEDs). We use a finite element model for charge transport in a GaInAsSb/GaSb double hetero-junction LED that is verified experimentally to consider optimal design and operation of low-bias LEDs. The wall-plug efficiency is shown to be enhanced by over 200× at nanowatt power levels and 20× at microwatt power levels. A design for room-temperature operation of a 2.2 μm LED with 100% efficiency is proposed—this represents a 110 °C reduction of the temperature required to observe unity efficiency.

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“…Since both energy and momentum must be conserved in the Auger process, the resulting rate, as quantified by the Auger coefficient, is quite sensitive to the details of the band structure. Furthermore, the Auger rate tends to increase rapidly with both temperature and wavelength (decreasing bandgap), often exponentially [39][40][41] . Despite the Auger T=300 K coefficient's dominant effect on key diode laser properties, it has never been widely characterized previously for type-I QWs with mid-IR bandgaps 42 , and reported values have varied considerably [42].…”

Section: Figure 1: (A)mentioning

confidence: 99%

Quantifying Auger recombination coefficients in type-I mid-infrared InGaAsSb quantum well lasers

Eales

Marko

Adams

et al. 2020

J. Phys. D: Appl. Phys.

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From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence of the Auger recombination coefficients in InGaAsSb/GaSb quantum well lasers emitting in the 1.7–3.2 µm wavelength range. From hydrostatic pressure measurements, the non-radiative component of threshold currents for individual lasers was determined continuously as a function of wavelength. The results are analysed to determine the Auger coefficients quantitatively. This procedure involves calculating the threshold carrier density based on device properties, optical losses, and estimated Auger contribution to the total threshold current density. We observe a minimum in the Auger rate around 2.1 µm. A strong increase with decreasing mid-infrared wavelength (<2 µm) indicates the prominent role of intervalence Auger transitions to the split-off hole band (CHSH process). Above 2 µm, the increase with wavelength is approximately exponential due to CHCC or CHLH Auger recombination, limiting long wavelength operation. The observed dependence is consistent with that derived by analysing literature values of lasing thresholds for type-I InGaAsSb quantum well diodes. Over the wavelength range considered, the Auger coefficient varies from a minimum of ≲ 1 × 10−16cm 4 s−1 at 2.1 µm to ∼8 × 10−16cm4 s−1 at 3.2 µm.

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Carrier recombination mechanisms in mid‐infrared GaInAsSb quantum well lasers

Cited by 18 publications

References 17 publications

Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

Design for enhanced thermo-electric pumping in light emitting diodes

Quantifying Auger recombination coefficients in type-I mid-infrared InGaAsSb quantum well lasers

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