Both radiative and nonradiative processes which occur in the active region of GaInAs-GaInAsP-InP asymmetric multiple quantum-well (AMQW) heterolasers with two quantum wells of different width (4 and 9 nm) are described. Several possible processes of non-radiative Auger recombination which affect the temperature sensitivity of the lasing threshold are analyzed and the temperature dependencies of the investigated processes are presented. For the above-mentioned AMQW heterostructure, it is shown that the influence of the Auger recombination processes on the temperature behaviour of the lasing threshold can be restrained by operation at temperatures lower than 340 K and the cavity losses which do not exceed 60 cm K1 .
The temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (4 and 9 nm) has been determined. Processes of non-radiative Auger recombination which occur in the active region of the quantum-well lasers have been included into consideration. The analytical approach for the evaluation of the characteristic temperature of the lasing threshold is presented. For described asymmetric quantumwell heterostructure lasers, it is shown that the influence of Auger recombination processes on the temperature behavior of the lasing threshold is not essential until the temperature of the active region is lower than 360 K and the cavity losses do not exceed 80 cm.
We discuss an optimization procedure for type-II mid-IR lasers. The QW layer composition was used as the variable parameter. The proposed design combines the suppression of the Auger recombination processes and the improvement of the electron and hole confinement, the characteristic temperature T 0 of the strained Ga 1-x In x As y Sb 1-y / GaSb MQW laser during laser operation in the 250 -350 K temperature range.
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