How to restrain Auger recombination predominance in the threshold of asymmetric bi-quantum-well lasers

Abstract

Both radiative and nonradiative processes which occur in the active region of GaInAs-GaInAsP-InP asymmetric multiple quantum-well (AMQW) heterolasers with two quantum wells of different width (4 and 9 nm) are described. Several possible processes of non-radiative Auger recombination which affect the temperature sensitivity of the lasing threshold are analyzed and the temperature dependencies of the investigated processes are presented. For the above-mentioned AMQW heterostructure, it is shown that the influence of the Auger recombination processes on the temperature behaviour of the lasing threshold can be restrained by operation at temperatures lower than 340 K and the cavity losses which do not exceed 60 cm K1 .

Microscopic statistical theory of Inhomogeneous broadening in InGaN/GaN quantum wells

“…We expect that results obtained here will have an impact on calculation of gain spectra of either asymmetric MQW heterostructures [15], [16] or conventional QWs with digital alloy barriers [17], because starting point in that case is band diagram [18]. It should also influence results on nonlinear gain [19], and, possibly, on Auger recombination rate in QWs [20].…”

Band engineering of complex asymmetric multiple quantum wells for optically pumped semiconductor disk lasers

“…Most significant is the Auger recombination. For typical values of carriers concentration at room temperature, Auger recombination time is about 10 −10 − 10 −11 s [3]-[6]. Thus, tunneling of both electrons and holes should be not slower than 10 12 s − 1.…”