Microscopic statistical theory of Inhomogeneous broadening in InGaN/GaN quantum wells

Abstract

Microscopic statistical theory of inhomogeneous broadening in InGaN/GaN quantum-well structures is developed. It is shown that inhomogeneous broadening can be described as energy-dependent daphasing time. Explicit relation between inhomogeneous broadening and spectral power density of the lateral interface potential fluctuations is derived.