Low-temperature wafer bonding: a study of void formation and influence on bonding strength

Zhang, Xuan Xiong; Raskin, Jean‐Pierre

doi:10.1109/jmems.2004.839027

Cited by 108 publications

(68 citation statements)

References 25 publications

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“…Note that plasma exposure can introduce defects and dislocations to the silicon oxide layer after a few seconds. 42 Instead, a dip in a DI water bath for a few minutes and a 15 min RCA-SC1 clean 43 at 65 C can be used to ensure surface cleanliness. Furthermore, to avoid the formation of voids between the two bonded wafers originating from the thermal decomposition of surface contaminants or the desorption of hydrogen, 42 a reduced annealing temperature 44 was chosen in protocol IV.…”

mentioning

confidence: 99%

High aspect ratio x-ray waveguide channels fabricated by e-beam lithography and wafer bonding

Neubauer

Hoffmann

Kanbach

et al. 2014

Journal of Applied Physics

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We report on the fabrication and characterization of hard x-ray waveguide channels manufactured by e-beam lithography, reactive ion etching and wafer bonding. The guiding layer consists of air or vacuum and the cladding material of silicon, which is favorable in view of minimizing absorption losses. The specifications for waveguide channels which have to be met in the hard x-ray range to achieve a suitable beam confinement in two orthogonal directions are extremely demanding. First, high aspect ratios up to 106 have to be achieved between lateral structure size and length of the guides. Second, the channels have to be deeply embedded in material to warrant the guiding of the desired modes while absorbing all other (radiative) modes in the cladding material. We give a detailed report on device fabrication with the respective protocols and parameter optimization, the inspection and the optical characterization.

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mentioning

confidence: 99%

High aspect ratio x-ray waveguide channels fabricated by e-beam lithography and wafer bonding

Neubauer

Hoffmann

Kanbach

et al. 2014

Journal of Applied Physics

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“…8h), the potential annealing voids would not generate continuously at higher temperatures. 6 In addition, the cumulative annealing involving long-time annealing steps at low temperature (e.g. ∼200…”

Section: Resultsmentioning

confidence: 99%

A Comparative Study: Void Formation in Silicon Wafer Direct Bonding by Oxygen Plasma Activation with and without Fluorine

Wang

Liu

Suga

2016

ECS J. Solid State Sci. Technol.

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A quantitative evaluation of void formation in plasma activated bonding of 200-mm silicon wafers is demonstrated. As a comparison, the wafers were treated with oxygen plasma or fluorine containing oxygen plasma prior to bonding, respectively. The bonding was performed at the room temperature (∼25 • C), and all the bonded pairs were annealed from 200 to 800 • C. Results shows adding a small amount of fluorine into the oxygen plasma could decrease the hydrophilicity of the silicon surfaces, and effectively mitigate void formation at the bonding interfaces during the subsequent annealing process. Moreover, long plasma treatments (e.g. >60 s) may produce more porous surfaces resulting in more annealing voids. A short fluorine containing plasma treatment (e.g. ∼10 s) is able to remove organic contaminants efficiently and causes restricted hydrophilic surfaces with less subsurface damages. It may lead to much fewer voids at bonding interfaces during the annealing. Void formation models are proposed to gain insight the mechanism of the plasma activated bonding without and with fluorine, respectively.

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“…For example, manufacturing of commercial wafer-bonded silicon-on-insulator (SOI) wafers up to 300 mm in diameter [9]. However, prohibition of elevated temperature anneals results in outgassing as a major issue in all low-temperature hydrophilic bonding [24]. …”

Section: O2 Plasma-assisted/sio2 Covalent Direct Bondingmentioning

confidence: 99%

“…Embedding a thick layer of porous material such as thermal SiO 2 or PECVD dielectrics has been reported as an efficient outgassing medium for H 2 O and H 2 diffusion and absorption [11,24], which is a motivation of using SiO 2 covalent bonding here. However, it is not applicable for situations where integration with a high proximity of two mating materials is needed, or optical, electrical or thermal interactions between mating materials are desired.…”

Section: O2 Plasma-assisted/sio2 Covalent Direct Bondingmentioning

confidence: 99%

Hybrid Integrated Platforms for Silicon Photonics

et al. 2010

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A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

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Low-temperature wafer bonding: a study of void formation and influence on bonding strength

Cited by 108 publications

References 25 publications

High aspect ratio x-ray waveguide channels fabricated by e-beam lithography and wafer bonding

High aspect ratio x-ray waveguide channels fabricated by e-beam lithography and wafer bonding

A Comparative Study: Void Formation in Silicon Wafer Direct Bonding by Oxygen Plasma Activation with and without Fluorine

Hybrid Integrated Platforms for Silicon Photonics

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