2010
DOI: 10.3390/ma3031782
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Hybrid Integrated Platforms for Silicon Photonics

Abstract: A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize h… Show more

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Cited by 263 publications
(160 citation statements)
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“…Feasibility of all-in-one photonics has been hindered by the complicated fabrication processes required, coupled with inefficient, high loss conversion of optical to electronic signals. Gallium arsenide, indium phosphide, and other III-V semiconductors are the chief substrate materials for photonics, while the predominant substrate in electronics is undoubtedly silicon [2]. Despite the predominant preference for these materials in their respective fields, the largely mismatched lattice constant and/or thermal expansion coefficient (TEC) makes integration challenging.…”
Section: Integration Of Photonic Components Into Microelectronicsmentioning
confidence: 99%
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“…Feasibility of all-in-one photonics has been hindered by the complicated fabrication processes required, coupled with inefficient, high loss conversion of optical to electronic signals. Gallium arsenide, indium phosphide, and other III-V semiconductors are the chief substrate materials for photonics, while the predominant substrate in electronics is undoubtedly silicon [2]. Despite the predominant preference for these materials in their respective fields, the largely mismatched lattice constant and/or thermal expansion coefficient (TEC) makes integration challenging.…”
Section: Integration Of Photonic Components Into Microelectronicsmentioning
confidence: 99%
“…As an alternative to typical high-temperature methods used to create strong bonding, O 2 plasma surface treatment or SiO 2 covalent wafer bonding (see Figure 1) has been used [2]. These methods result in robust bonding under low temperature (< 400°C) [5,6].…”
Section: Integration Of Photonic Components Into Microelectronicsmentioning
confidence: 99%
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“…© 2017 Author (s In recent years, significant breakthrough has been made in the field of silicon photonics, and various Si-based integrated photonic devices have been developed, making Si-based optical systems promising for future information processing and communications, especially in data center and supercomputing. [1][2][3][4] However, silicon is not an efficient light emitting material due to its indirect band gap. As a result, bonding III-V compound semiconductors to silicon-on-insulator (SOI) wafers has become a key technology to realize hybrid integrated light sources in silicon photonics.…”
mentioning
confidence: 99%