Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

Gong, Kewei; Sun, Changzheng; Xiong, Bing; Han, Yanjun; Hao, Zhibiao; Wang, Jian; Wang, Lai; Li, Hongtao

doi:10.1063/1.4975345

Cited by 12 publications

(9 citation statements)

References 24 publications

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“…The slow scan results of In-3 d peak of sample grown at 480 °C (see Fig. 2 c) can be deconvolved into three peaks at 443.5, 442.3, and 444.4 eV, which are ascribed to InP, In 2 O 3, and InPO 4 [ 41 , 42 ], respectively. Based on the relative intensity, the weights ratio of the above compounds is 31.0%, 48.7%, and 20.3%, respectively.…”

Section: Resultsmentioning

confidence: 99%

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

et al. 2021

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Growth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

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Section: Resultsmentioning

confidence: 99%

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

et al. 2021

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“…The bonded sample is then placed in a graphite bonding chuck with a pressure of 0.8 MPa applied to it. To complete the wafer bonding process, the wafer pair together with the chuck is annealed in an oven at 300 °C for 8 h in nitrogen ambient …”

Section: Methodsmentioning

confidence: 99%

“…Wafer bonding is considered a promising technique to circumvent this problem, and InP/silicon‐on‐insulator (SOI) wafer bonding has been extensively studied as the hybrid integration platform for photonic integrated circuits (PICs) with excellent performance and novel functionality . Furthermore, adopting Al 2 O 3 as the intermediate layer is reported to improve the bonding strength and thermal properties of bonded samples . In our study on plasma‐assisted InP/Al 2 O 3 /SOI wafer bonding, it is found that the success of bonding relies critically on NH 4 OH treatment of InP wafer.…”

Section: Introductionmentioning

confidence: 99%

Effect of NH₄OH Treatment on Plasma‐Assisted InP/Al₂O₃/SOI Direct Wafer Bonding

Gong

Sun

Xiong

et al. 2018

Physica Status Solidi (a)

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The effect of NH 4 OH treatment on InP/Al 2 O 3 /SOI direct wafer bonding is investigated. The atomic force microscope (AFM) and water contact angle (CA) results reveal a decrease in root-mean-square (RMS) surface roughness and CA of the NH 4 OH-treated InP wafer. X-ray photoelectron spectroscopy (XPS) analysis is carried out to ascertain the chemical composition of the bonding surfaces. It is found that NH 4 OH treatment followed by plasma activation increases the content of oxides on the surface of InP wafer. Based on these results, it is concluded that NH 4 OH treatment helps increase hydrophilicity and contact area of the bonding surface, thus contributing to the success of plasma-assisted InP/Al 2 O 3 /SOI wafer bonding.

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“…Due to the high dielectric constant, proper electrical property, large band gap, good thermal stability and thermal conductivity, Al 2 O 3 films are widely used as gate dielectrics [1][2][3] or protective layers 4,5) for functional layers transferred to different substrates in the semiconductor industry. In recent years, their applications have been extended to optics, 6) micro-electromechanical systems 7) and protective coatings 8) thanks to its optical, mechanical and barrier properties.…”

Section: Introductionmentioning

confidence: 99%

Surface activated bonding of ALD Al₂O₃ films

Wang¹,

Takigawa

Suga

2023

Jpn. J. Appl. Phys.

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Room temperature direct bonding of plasma enhanced ALD Al2O3 films was achieved by using surface activated bonding (SAB). ALD Al2O3 films was amorphous with C and O impurities contained. The high deposition power and H2 plasma post-treatment increased the crystallinity and hydrophilicity of ALD Al2O3 films, respectively. However, both methods increased the surface roughness of films slightly. The bond strength of ALD Al2O3 films was not changed obviously by raising the deposition power, but it experienced a slight decrease after H2 plasma post-treatment. The water in the debonding atmosphere influenced the bond strength of standard ALD Al2O3 films greatly, which was 0.54 J/m2 in humid air and 1.00 J/m2 in anhydrous N2. The bond strength in vacuum was just a little larger than that in anhydrous N2 suggesting that the trapped water at the bonding interface was less.

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Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

Cited by 12 publications

References 24 publications

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Effect of NH₄OH Treatment on Plasma‐Assisted InP/Al₂O₃/SOI Direct Wafer Bonding

Surface activated bonding of ALD Al₂O₃ films

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Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

Cited by 12 publications

References 24 publications

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Effect of NH4OH Treatment on Plasma‐Assisted InP/Al2O3/SOI Direct Wafer Bonding

Surface activated bonding of ALD Al2O3 films

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Product

Resources

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Effect of NH₄OH Treatment on Plasma‐Assisted InP/Al₂O₃/SOI Direct Wafer Bonding

Surface activated bonding of ALD Al₂O₃ films