Low-temperature transport properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Nb</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ta</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>thin films

Giannouri, M.; Papastaikoudis, C.; Rosenbaum, Ralph

doi:10.1103/physrevb.59.4463

Cited by 9 publications

(12 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, for type II superconductors such as ZrRh and TaN, most experimental works did not observe the pure T − 1 dependence of dephasing rate [26,27]. It is worth mentioning that the observation of Giannouri et al [28] with their NbTa film is very similar to ours except that the sudden drop of dephasing rate at temperature approaching T c has not been seen even at 1.4 K in our experiment.…”

Section: Resultssupporting

confidence: 79%

Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy

Lin

Chang

et al. 2015

Nanoscale Res Lett

View full text Add to dashboard Cite

We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.

show abstract

Section: Resultssupporting

confidence: 79%

Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy

Lin

Chang

et al. 2015

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…The phase relaxation rate 𝜏 𝜙 −1 in this regime varies proportionally to (𝑇 − 𝑇 𝑐 ) as shown by the red dashed curves in Fig. 7(b) in a similar fashion as that of the Ginzburg-Landau (GL) phase relaxation rate 𝜏 𝐺𝐿 −1 = (8𝑘 𝐵 𝜋ℏ)(𝑇 − 𝑇 𝑐 ⁄ ) at T very close to Tc [40].…”

Section: A R(t) Measurements Under Perpendicular Magnetic Fieldmentioning

confidence: 54%

“…Re70W30 and Nb1-xTax thin films [39,40]. The phase relaxation rate 𝜏 𝜙 −1 in this regime varies proportionally to (𝑇 − 𝑇 𝑐 ) as shown by the red dashed curves in Fig.…”

Section: A R(t) Measurements Under Perpendicular Magnetic Fieldmentioning

confidence: 85%

Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films

Yadav

Kaushik²,

Saravanan³

et al. 2023

Phys. Rev. B

View full text Add to dashboard Cite

In 2D disordered superconductors prior to superconducting transition, the appearance of a resistance peak in the temperature dependent resistance [R(T)] measurements indicates the presence of weak localization (WL) & electron-electron interaction (EEI) in diffusion channel and superconducting fluctuations in the Cooper channel. Here, we demonstrate an interplay between superconducting fluctuations and electronelectron interaction by low temperature magnetotransport measurements for a set of 2D disordered TiN thin films. While cooling down the sample, a characteristic temperature T* is obtained from the R(T) at which superconducting fluctuations start to appear. The upturn in R(T) above T* corresponds to WL and/or EEI. By the temperature and field dependences of the observed resistance, we show that the upturn in R(T) originates mainly from EEI with a negligible contribution from WL. Further, we have used the modified Larkin's electron-electron attraction strength β(T/Tc), containing a field induced pair breaking parameter, in the Maki-Thompson (MT) superconducting fluctuation term. Here, the temperature dependence of the β(T/Tc) obtained from the magnetoresistance analysis shows a diverging behavior close to Tc and it remains almost constant at higher temperature within the limit of ln(T/Tc) <1. Interestingly, the variation of β(T/Tc) on the reduced temperature (T/Tc) offers a common trend which has been closely followed by all the concerned samples presented in this study. Finally, the temperature dependence of inverse phase scattering time (𝜏 𝜙 −1 ), as obtained from the magnetoresistance analysis, clearly shows two different regimes; the first one close to Tc follows the Ginzburg-Landau relaxation rate (𝜏 𝐺𝐿 −1 ), whereas, the second one at high temperature varies almost linearly with temperature indicating the dominance of inelastic electron-electron scattering for the dephasing mechanism. These two regimes are followed in a generic way by all the samples in spite of being grown under different growth conditions.

show abstract

“…The critical temperature was taken from the dependence R s (T) and defined the behaviour R s (T) in the temperature range near and below the superconducting transition. Also the parameter A was introduced in the Maki-Thompson correction σ MT (4) to take into account the fact that according [47,48] β takes values smaller than the tabulated theoretical values shown in [45] near the critical temperature (T/T C < 2). So, we used several fitting parameters but which are independent and can be determined in the only possible way.…”

Section: Study Of the R S (T) Dependences Formentioning

confidence: 99%

NbN single-photon detectors with saturated dependence of quantum efficiency

Smirnov

Divochiy²,

Vakhtomin

et al. 2018

Supercond. Sci. Technol.

View full text Add to dashboard Cite

It was investigated the possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency versus normalized bias current. It was shown that the saturation increases for the detectors based on finer films with a lower value of R s300 /R s20 . The decreasing of R s300 /R s20 related to increasing influence of quantum corrections to conductivity of superconductors and, in its turn, to decreasing electron diffusion coefficient. The best samples has constant value of system quantum efficiency 94% at I b /I c~0 .8 and wavelength 1310 nm.

show abstract

Low-temperature transport properties ofNb1−xTaxthin films

Cited by 9 publications

References 26 publications

Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy

Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy

Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films

NbN single-photon detectors with saturated dependence of quantum efficiency

Contact Info

Product

Resources

About