Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy

Lin, Shih Wei; Wu, Yue; Chang, Li; Liang, Chi‐Te; Lin, Sheng-Di

doi:10.1186/s11671-015-0782-x

Cited by 9 publications

(10 citation statements)

References 39 publications

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“…One possible explanation is the existence of electronic quantum size effect in sample A. 6,19,23,24 It could be the first room-temperature observation of quantum size effect in metals but further investigations are certainly needed to confirm this point. In addition, even for sample A of 3-nm Al, the room-temperature resistivity is as low as 10 -7 Ω-m, which enables the applications such as transparent electrodes in light emitting devices.…”

Section: Resultsmentioning

confidence: 99%

Atomic-scale epitaxial aluminum film on GaAs substrate

Fan

et al. 2017

AIP Advances

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Atomic-scale metal films exhibit intriguing size-dependent film stability, electrical conductivity, superconductivity, and chemical reactivity. With advancing methods for preparing ultra-thin and atomically smooth metal films, clear evidences of the quantum size effect have been experimentally collected in the past two decades. However, with the problems of small-area fabrication, film oxidation in air, and highly-sensitive interfaces between the metal, substrate, and capping layer, the uses of the quantized metallic films for further ex-situ investigations and applications have been seriously limited. To this end, we develop a large-area fabrication method for continuous atomic-scale aluminum film. The self-limited oxidation of aluminum protects and quantizes the metallic film and enables ex-situ characterizations and device processing in air. Structure analysis and electrical measurements on the prepared films imply the quantum size effect in the atomic-scale aluminum film. Our work opens the way for further physics studies and device applications using the quantized electronic states in metals.

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Section: Resultsmentioning

confidence: 99%

Atomic-scale epitaxial aluminum film on GaAs substrate

Fan

et al. 2017

AIP Advances

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“…5 and 6, and provide values for the complex impedance Z S , quality factor Q S , and surface inductance L S . [43]; g [44]; h [45]; i [46]; j [47]; k [48]; l ξ = (ℏD/2πk B T ), T = 100 mK.…”

Section: Calculation Approaches and Resultsmentioning

confidence: 99%

Electromagnetic Properties of Aluminum-Based Bilayers for Kinetic Inductance Detectors

Zhang

Barry

Cecil

et al. 2023

IEEE Trans. Appl. Supercond.

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The complex conductivity of a superconducting thin film is related to the quasiparticle density, which depends on the physical temperature and can also be modified by external pair breaking with photons and phonons. This relationship forms the underlying operating principle of Kinetic Inductance Detectors (KIDs), where the detection threshold is governed by the superconducting energy gap. We investigate the electromagnetic properties of thin-film aluminum that is proximitized with either a normal metal layer of copper or a superconducting layer with a lower TC , such as iridium, in order to extend the operating range of KIDs. Using the Usadel equations along with the Nam expressions for complex conductivity, we calculate the density of states and the complex conductivity of the resulting bilayers to understand the dependence of the pair breaking threshold, surface impedance, and intrinsic quality factor of superconducting bilayers on the relative film thicknesses. The calculations and analyses provide theoretical insights in designing aluminum-based bilayer kinetic inductance detectors for detection of microwave photons and athermal phonons at the frequencies well below the pair breaking threshold of a pure aluminum film.

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“…To sum up, following the common practice [15,16,[38][39][40][41][42][43][44][45], we describe the magnetoconductance taking into account contrib utions (1), ( 7), ( 10) and ( 9):…”

Section: The Maki-thompson Contribution (Mt) Coming Frommentioning

confidence: 99%

“…This discrepancy can be eliminated if we consider electron-electron attraction strength β as a second fitting param eter (figures 4(b) and (c)), as it was done in [15,38,[40][41][42][43].…”

Section: Critically Disordered Filmsmentioning

confidence: 99%

Quantum contributions to the magnetoconductivity of critically disordered superconducting TiN films

Mironov

Postolova

Baturina

2018

J. Phys.: Condens. Matter

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The onset of superconductivity in the presence of disorder is a fundamental problem of condensed matter physics. Here we investigate the magnetoconductance of disordered (8 > k F l > 1.8) superconducting TiN films above the critical temperature T c . We show that the magnetoconductivity of moderately disordered films with k F l > 5 is in full agreement with the perturbative theory of quantum contributions to conductivity. We demonstrate that the magnetoconductivity of films with k F l 5 is also in agreement with the perturbative theory down to temperatures T ≈ 2T c . The quantitative discrepancy between experiment and theory develops only below temperatures T ≈ 2T c for films with k F l 5. This discrepancy can be eliminated if we assume steeper temperature dependence of the Larkin's electron-electron attraction strength, β(T/T c ). The obtained temperature dependence of electron phase breaking time τ ϕ (T/T c ) is in agreement with theoretical predictions for all samples.

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Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy

Cited by 9 publications

References 39 publications

Atomic-scale epitaxial aluminum film on GaAs substrate

Atomic-scale epitaxial aluminum film on GaAs substrate

Electromagnetic Properties of Aluminum-Based Bilayers for Kinetic Inductance Detectors

Quantum contributions to the magnetoconductivity of critically disordered superconducting TiN films

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