Low-temperature synthesis of multilayer graphene/amorphous carbon hybrid films and their potential application in solar cells

Abstract

The effect of reaction temperature on the synthesis of graphitic thin film on nickel substrate was investigated in the range of 400°C to 1,000°C. Amorphous carbon (a-C) film was obtained at 400°C on nickel foils by chemical vapor deposition; hybrid films of multilayer graphene (MLG) and a-C were synthesized at a temperature of 600°C, while MLG was obtained at temperatures in excess of 800°C. Schottky-junction solar cell devices prepared using films produced at 400°C, 600°C, 800°C, and 1,000°C coupled with n-type Si demonstrate power conversion efficiencies of 0.003%, 0.256%, 0.391%, and 0.586%, respectively. A HNO3 treatment has further improved the efficiencies of the corresponding devices to 0.004%, 1.080%, 0.800%, and 0.820%, respectively. These films are promising materials for application in low-cost and simple carbon-based solar cells.

Temperature- and Hydrogen-Gas-Dependent Reversible Inversion of n-/p-Type Conductivity in CVD-Grown Multilayer Graphene (MLG) Film

“…22 The D band indicates the presence of grain boundaries and defects in the graphene layer. 23 Furthermore, if the intensity ratio of the D to G band (I D /I G ) is $1, the presence of defects in the graphene matrix is highly likely. For our samples, the I D /I G value was $0.8, indicating the presence of a large number of defects.…”

Investigation of carbon phase evolutions in titanium nitride-carbon nanocomposites prepared in supercritical benzene with respect to their lithium storage capacity

“…This evidence shows the e ect of reactive atmosphere on not only complement of TiN nitridation, but also on carbon phase evolution. The main reason for this is that, under ammonia atmosphere, the phase transition temperature of carbonaceous species reduces to 800 C, while, in N 2 atmosphere, this temperature will be as high as 1500 C [20,21]. Moreover, under N 2 atmosphere, the presence of carbonaceous species prevents the crystallization and growth of the TiN crystals during heat treatment [22].…”

Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)

“…CVD and SiC graphene exhibit opto-electronic properties that could potentially outperform any alternative material and permit its implementation into a wide spectrum of applications with devices like field effect transistors (FETs) 7 , solar cells, sensors. In particular triltroayer graphene attracts a lot of interest 8,9,10 . The electronic bands structure of both stable forms of trilayer graphene -i.e., Bernal (ABA) and rhombohedral (ABC) 5 , differ for the crystallographic stacking of the individual carbon layers.Nevertheless to consider applications the electronic properties of synthesized graphene still remain to be tailored to become competitive.…”