Characterization of N-doped multilayer graphene grown on 4H-SiC (0001)

Arezki, Hakim; Ho, Kuan-I; Jaffré, Alexandre; Alamarguy, David; Alvarez, José; Kleider, Jean‐Paul; Lai, Chao‐Sung; Boutchich, Mohamed

doi:10.1063/1.4913537

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2019

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“…The graphene layers were grown in a closed RF induction furnace at a temperature of about 1550 °C at 10 −5 mbar. Eight to 10 layers determined by STEM analysis were intentionally chosen to fabricate the devices [3,26]. Following the growth, Raman spectroscopy experiments were carried out to evaluate the integrity of the graphene material.…”

Section: Methodsmentioning

confidence: 99%

Graphene/fluorographene heterostructure for nano ribbon transistor channel

Chang¹,

Ho²,

Boutchich³

et al. 2019

Semicond. Sci. Technol.

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4H-SiC multilayer graphene/fluorographene heterostructures have been implemented to fabricate a 40 nm transistor channel. The plasma-assisted fluorination process with a carbon-tofluorine ratio of ∼1 allows the passivation of the sidewalls with a substantial reduction in the channel width to form multilayer graphene nanoribbons (GNRs). A graphene channel is completely embedded in the passivated top and sidewalls of graphene. the gate leakage is in the nanoampere range, which makes the fluorinated dielectric robust enough for tunnel barrier. We have fabricated top gate transistors using this heterostructure and demonstrated the onset of rectification using this process. Despite the limited on/off ratio, I-V characteristics of GNRs of 40 nm channel width show a clear improvement compared to 50 μm device indicating that this process is a potential route to pattern nanoribbons.

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Section: Methodsmentioning

confidence: 99%