Low-Temperature Solution-Based In₂O₃ Channel Formation for Thin-Film Transistors Using a Visible Laser-Assisted Combustion Process

Trends in Low‐Temperature Combustion Derived Thin Films for Solution‐Processed Electronics

“…[71] The factors such as predecomposition, heating profile, and sample size play a vital role in realizing thin film combustion. [71,135] The presence of fuel-ligand indeed helps to Si/Zr-SAND [132] lower the metal oxide formation temperature, but a progressive reaction demands a certain degree of predecomposition of the precursor. The vacuum dried (at 70 °C) In 2 O 3 combustible precursor with acetylacetone-fuel requires a temperature of 150 °C for the complete formation of In 2 O 3 under isothermal heating (Figure 23a).…”

“…[71] The factors such as predecomposition, heating profile, and sample size play a vital role in realizing thin film combustion. [71,135] The presence of fuel-ligand indeed helps to Si/Zr-SAND [132] 23a). Similar observations have also been made in ITO (Figure 23b) and ZnO systems [71] (Figure 23b).…”

Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing

“…42,43 To ensure the desirable electrical performance of solution-processed MOTFTs while reducing annealing temperature, several novel processing techniques like laser annealing, UV/ozone treatment, deep-UV photochemical activation, and combustion synthesis (CS) have been devised elaborately. 24,44,45 Among these methods, combustion synthesis (CS) has been regarded as a time-saving and low-cost technique for producing the desired metal-oxide semiconductor and dielectric thin films at relatively low temperature without additional post treatment. 18,24,46 No extra special equipment is mandatory to provide additional energy to reduce the processing temperature since the combustion synthesis reaction of precursor compounds itself induce extensive heat within the thin film to form the metal-oxide framework.…”

“…However, organic solvent 2-Me (toxic for humans and harmful to the environment) is widely used for preparing the combustion precursor solution. 24,43,44,49,50 Therefore, the design and implementation of proper ecofriendly solvents, metal solvents (metal source), and compatibility for solution process MOTFT is crucial to achieve high-performance metal-oxide TFTs at low temperatures.…”

“…Up to date, solution-process methods have been well established for crystalline metal-oxide semiconductors such as In 2 O 3 , ZnO, and SnO 2 and amorphous ternary and quaternary materials such as Zn–Sn–O (ZTO), In–Zn–O (IZO), In–Ga–Zn–O (IGZO), and so on. ,− Among various metal-oxide semiconductors, indium-based metal-oxide materials have been intensively studied because of their high electron mobility originating from the ns orbital of indium, which can be deposited by a solution process based on various organic solvents and water. ,− In addition to metal-oxide semiconductors, solution-processed high- k metal-oxide gate dielectrics, such as HfO 2 , Al 2 O 3 , and ZrO 2 , ,, have been well studied to achieve low-voltage operation fully solution-processed TFTs. Although the solution-processed metal-oxide thin films exhibit significant potential in next-generation electronics, high annealing temperatures (above 400 °C) are generally required due to the necessary sol–gel condensation, densification, and removing impurity. , To ensure the desirable electrical performance of solution-processed MOTFTs while reducing annealing temperature, several novel processing techniques like laser annealing, UV/ozone treatment, deep-UV photochemical activation, and combustion synthesis (CS) have been devised elaborately. ,, Among these methods, combustion synthesis (CS) has been regarded as a time-saving and low-cost technique for producing the desired metal-oxide semiconductor and dielectric thin films at relatively low temperature without additional post treatment. ,, No extra special equipment is mandatory to provide additional energy to reduce the processing temperature since the combustion synthesis reaction of precursor compounds itself induce extensive heat within the thin film to form the metal-oxide framework . By exquisitely adjusting the chemical composition and proportion of the oxidizer (e.g., nitrates and chlorides) and the fuel (e.g., urea and acetylacetone) in the precursor solution, a localized exothermic reaction occurs within the as-deposited precursor during the annealing process .…”