Low temperature Si3N4 direct bonding

Bower, R.W.; Ismail, Mohamad Safari; Roberds, B.

doi:10.1063/1.109002

Cited by 78 publications

(31 citation statements)

References 12 publications

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“…This room temperature bonding method of LPCVD silicon nitride without any surface pre-smoothening processes (Bower et al 1993;Sanchez et al 1997) prior to bonding was not yet reported (as far as the authors knows). High surface energies are obtained when activating both wafers of a silicon nitride wafer bonding pair using either oxygen or argon plasma.…”

Section: Discussionmentioning

confidence: 91%

Versatile low temperature wafer bonding and bond strength measurement by a blister test method

et al. 2005

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Versatile low temperature wafer bonding and bond strength measurement by a blister test methodAbstract We present a low temperature plasma assisted bonding process that enables the bonding of silicon, silicon oxide and silicon nitride wafers among each other at annealing temperatures as low as room temperature. The process can be applied using standard clean room equipment. Surface energies of differently treated bonded samples are determined by a blister test method for square shaped cavities. For this reason, we extend the well-known blister test method for round shaped cavities to the square shaped case by a combined analytical and numerical approach. Accordingly, the energetic favored crack front propagation in the bond interface is determined by numerical simulations. The surface energies of the tested samples are calculated and compared to anodic silicon-to-Pyrex Ò bonds. Surface energies of up to 2.6 J/m 2 can be achieved between silicon and silicon oxide wafer pairs at low annealing temperatures. Room temperature bonded samples show a surface energy of 1.9 J/m 2 . The surface energy of silicon-to-Pyrex glass bonds yields 1.3 J/m 2 . Small structures, e.g., bridges down to 5 lm can be bonded using the discussed bonding process. Selective bonding of silicon-to-silicon oxide wafer pairs is performed by structuring the oxide layer. The successful integration of the bonding process into the fabrication of micropumps is highlighted.

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Section: Discussionmentioning

confidence: 91%

Versatile low temperature wafer bonding and bond strength measurement by a blister test method

et al. 2005

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“…It has also been found that the tensile strength of Pyrex-glass can be weaker than 10 MPa, as reported by Pegasus (www.pegasus-glass.com/pyrex.asp). Also, the failure strength of bulk Si is approximately 10 MPa (Bower et al 1993). Therefore, it is possible for debonding or breakup to occur inside the Pyrex glass or Si rather than at the site of bonding interface where the bond strength is greater than the failure strength of the glass or Si.…”

Section: Bonding Strengthmentioning

confidence: 97%

Influences of interface oxidation on transmission laser bonding of wafers for microsystem packaging

et al. 2006

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In the fabrication of micro-devices and systems, wafer bonding offers a unique opportunity for constructing complicated three-dimensional structures. In this paper, a wafer bonding technique, called transmission laser bonding (TLB), is studied with focus on the effects of interface oxidation and contact pressure on the bonding strength. The TLB is implemented for bonding Pyrex glass-to-silicon wafers, with and without interface oxide layers, using a Q-switch pulsed Nd:YAG laser. The tensile strengths of the TLB bonded specimens are comparable to those generated by the existing major wafer bonding techniques. The advantages of TLB are also discussed with some details. The oxide thickness is measured by spectroreflectometry while the roughness of the oxidized surfaces is quantified using Atomic Force Microscopy (AFM). The bonded interfaces are analyzed by X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) to study the migration and diffusion of different atoms across the bonding interface and to provide the necessary information for the understanding of the bonding mechanism. A thermal penetration analysis is also provided to validate the findings of the bond strength and spectroscopic evaluations.

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“…Further reduction in the bonding temperature has been obtained using ultra high vacuums with atomic H or Ar sputter cleaning procedures [18], [19]. An alternative route for joining III-V wafers is using hydrophilic Si-based layers [20], [21]. This approach avoids the requirement for ultra high vacuums, allows relatively low processing temperatures, enables the use of bonding procedures well-developed for Si-based materials, and provides less sensitivity to surface microroughness than hydrophobic bonding [5], [22].…”

Section: Introductionmentioning

confidence: 99%

Multi-Watt Semiconductor Disk Laser by Low Temperature Wafer Bonding

Rantamäki

Lyytikäinen

Heikkinen

et al. 2013

IEEE Photon. Technol. Lett.

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We present wafer bonding techniques applied for the first time in integrating GaAs-based distributed Bragg reflectors (DBRs) with InP-based active regions in optically pumped semiconductor disk lasers. The bonding procedures are performed at a modest temperature of 200°C and enable multiwatt output powers from 1.3 µm semiconductor disk lasers. These technologies are critical for vertical-cavity lasers emitting in the range 1.3-1.6 µm since monolithically grown lattice-matched InP structures suffer from DBRs with low refractive index contrast and poor thermal conductivity when compared with GaAs-based DBRs.Index Terms-Low temperature wafer bonding, molecular beam epitaxy (MBE), semiconductor disk laser (SDL).

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Low temperature Si3N4 direct bonding

Cited by 78 publications

References 12 publications

Versatile low temperature wafer bonding and bond strength measurement by a blister test method

Versatile low temperature wafer bonding and bond strength measurement by a blister test method

Influences of interface oxidation on transmission laser bonding of wafers for microsystem packaging

Multi-Watt Semiconductor Disk Laser by Low Temperature Wafer Bonding

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