Low temperature rf-sputtered In and Al co-doped ZnO thin films deposited on flexible PET substrate

Third generation photovoltaics — Early intervention for circular economy and a sustainable future

“…Replacement with FTO on PET has been problematic due to the high temperature PVD process used for FTO deposition and degradation of PET in the process. Mitigation strategies enabling ITO substitution may result from research into new low temperature methods for deposition of TCOs such as RF magnetron sputtering [30][31][32]. Substitution with graphene coated PET may be a suitable solution, however its cost is currently prohibitive for commercial application.…”

Excellent properties of Ga‐doped ZnO film as an alternative transparent electrode for thin‐film solar cells

“…In addition, there is also concern about eco-friendliness and sustainability of ITO due to its toxicity. In comparison, ZnO-based TCO films [16][17][18] exhibit unique advantages including low-cost, abundant earth-reserve, and non-toxicity. 19 Nowadays, Al-doped ZnO (AZO) films are mainly applied as the electrode for CIGS thin-film solar cells.…”

Fabrication of chemically stable hydrogen- and niobium-codoped ZnO transparent conductive films

“…For example, band-gap widening and good conductivity of ZnO lms were achieved by their co-doping with group-III elements (Al, Ga, or In) and Mg. [16][17][18][19][20] Compared with Al-doped ZnO lms (AZO), the ZnO lms which were codoped with Al and another element from group III (B, Ga, or In) exhibit lower resistivities. [21][22][23] Though less-considered, the cation-anion co-doping of ZnO lms is worth exploring; the ZnO thin lms codoped with N and a group-III element (B, Al, or Ga) have a p-type conductivity. [24][25][26] As found by recent rst-principle calculations, for any Fermilevel position, H + in ZnO has a lower energy than H 0 and H À , which suggests that hydrogen in ZnO can act as shallow n-type donor-a unique doping characteristic which is different from the amphoteric function that hydrogen has in semiconducting or insulating materials.…”