Low-temperature resistivity ofLa0.7Sr0.3MnO3ultra thin films: Role of quantum interference effects

Weak localization and1/fnoise inNd1.83Ce0.17

“…The same expression has also been used to account for weak-localization effects in ultrathin films of La 0.7 Sr 0.3 MnO 3 . 28 The experimental data points in Fig. 1 have been measured at decreasing temperatures, from 300 to 9 K, with a bias current value of 1 mA.…”

Intrinsic and precipitate-induced quantum corrections to conductivity in La2/3Sr1/3MnOGao1, Cao2, Zhang3 et al. 2012Phys. Rev. B

“…al. 21 used epitaxially grown single phase La 0.7 Sr 0.3 MnO 3 films and found an upturn of resistivity below 60 K. This effect was studied as a function of film thickness and magnetic field and a thickness dependent crossover from 3D to 2D behaviour was observed. They interpreted their results as an interplay of EEI and localization effects, however, leaving all defect related contributions to the magnetoresistance as an open question.…”

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

“…However, the phase coherence of electron waves has already been destroyed by the strong spontaneous ferromagnetic field in these compounds. 22,23 Second, Maritato et al 13 observed that the weak localization effect plays an increasingly important role in influencing the low-temperature resistivity upturn only for very thin films ͑t Ͻ 20 nm͒. For our sample, the film thickness is about 100 nm, which is relatively thick.…”

“…7 It is noteworthy that Lee et al 8 theoretically pointed out the possible presence of quantum corrections to conductivity ͑QCC͒ in manganite single crystals and thin films. [9][10][11][12] Maritato et al 13 studied the effects of thickness ͑t͒ on the lowtemperature ͑Ͻ60 K͒ transport properties of La 0.7 Sr 0.3 MnO 3 ͑3.5Յ t Յ 40 nm͒ thin films, and found that the resistivity upturn appears with decreasing film thickness and interpreted this phenomena as due to the QCC effect which corrects the resistivity from two sources: ͑1͒ electron-electron ͑e-e͒ interactions enhanced by disorder and ͑2͒ weak localization effect due to the finite dimensions of the systems. Mukhopadhyay et al 12 studied the coexist of quantum corrections and intergranular transport on La 0.67 Sr 0.33 MnO 3 and Nd 0.67 Sr 0.33 MnO 3 thin films and ascribed it to e-e interaction in two dimensions.…”