Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

Abstract

Based on the complexity and difficult understanding on low-temperature resistivity minimum in manganites, the effect of ferroelectric-poling-induced strain on Kondo-type transport behavior was systemically investigated as a function of magnetic field for La 0.7 Ca 0.15 Sr 0.15 MnO 3 manganite thin films grown on ferroelectric 0.67Pb͑Mg 1/3 Nb 2/3 ͒O 3 -0.33PbTiO 3 ͑PMN-PT͒ single-crystal substrates. The results show that the lowtemperature resistivity upturn is mainly caused from quantum correction effects driven by electron-electron interaction and inelastic scattering. Whether the PMN-PT substrate is in unpoled or poled state, the temperature where the resistivity shows an upturn near 15 K shifts to a higher temperature under magnetic field. The ferroelectric poling induces a reduction in the in-plane tensile strain and thus the lattice distortion of the film, which suppresses the resistivity upturn. These prove that the local lattice distortion relevant to the strain of the film is one of the main disorders that influence the resistivity upturn. The present results will be meaning to understand the physical mechanism of Kondo-type behavior at low temperature in colossal magnetoresistance manganites.

Evidence of weak localization in quantum interference effects observed in epitaxial La0.7Sr0.3MnO3 ultrathin films

“…In polycrystalline samples, the resistivity minima at low temperatures shift towards the lower temperatures upon applying a magnetic field and disappear at certain critical fields, which is interpreted in terms of the spin-polarized tunneling via grain boundaries1678. While Kondo effect dominates in intrinsically disordered samples910. Recently, QIEs in manganites have been intensively investigated to interpret the low-temperature resistivity minima26911121314.…”

“…While Kondo effect dominates in intrinsically disordered samples910. Recently, QIEs in manganites have been intensively investigated to interpret the low-temperature resistivity minima26911121314. Generally, QIEs lead to correction to the resistivity from two different sources5: (i) electron-electron (e-e) interaction and subsequent modification of the density of states at the Fermi energy; (ii) weak localization (WL) effect arising from the self-interference of the wave pockets as they are backscattered coherently by the impurities or other defects.…”

Crossover effect of inter-granular transport and quantum correction in Co-doping La2/3Ca1/3MnO3 manganites

“…The inelastic scattering which gives r in ¼ r n T n includes the electron-phonon (e-p) interaction, electron-magnon (e-m) interaction, and so on [25,26]. A power-law T 1/2 behavior of resistivity is expected to arise from 3D e-e interaction due to disorder in the system which is to be a first-order approximation independent of the magnetic field [18,19,24,30,31]. We only consider the main contributions at low temperature resistivity and fit the low temperature between 0 and 3 T to Eq.…”

Comment on “Magnetic field mediated low-temperature resistivity upturn in electron-doped La1−xHfxMnO3 manganite oxides” [J. Appl. Phys. 112, 123710 (2012)]

“…However, the only argument by Guo et al in favor of utilization of the above quantum effects for description of LT conductivity in their samples is based on previously reported analogous attempts. [2][3][4] Keep in mind that the applicability of Kondolike approach was also not substantiated in a proper way in Ref. 2.…”

“…Comment on "Magnetic field mediated low-temperature resistivity upturn in electron-doped La 12x Hf x MnO 3 In particular, shallow minima were observed at some T min below 100 K on q(T) curves. Application of an external H 5 T leads first to a decrease in the T min value, while this value increases notably at H > 0.75 T. The authors attributed this complex behavior to competitive electron-electron interaction and Kondo-like spin dependent scattering of carriers.…”