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Kumar, Dhananjay; Sankar, Jag; Narayan, J.; Singh, Rajiv K.; Majumdar, A. K.

doi:10.1103/physrevb.65.094407

Cited by 141 publications

(92 citation statements)

References 17 publications

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“…The low-temperature resistivity minimum and upturn in polycrystalline samples was found to be suppressed by magnetic field and was interpreted in terms of the intergrain spin-polarized tunneling through grain boundaries. [1][2][3] The intergrain tunneling model was experimentally confirmed by Rozenberga and co-workers 1,2 and Xu et al 3 The low-temperature resistivity upturn in intrinsically disordered ͑e.g., magnetic/charge phase separation͒ samples [4][5][6] was attributed to the Kondo-type effect which was previously observed in dilute magnetic alloys. 7 It is noteworthy that Lee et al 8 theoretically pointed out the possible presence of quantum corrections to conductivity ͑QCC͒ in manganite single crystals and thin films.…”

Section: Introductionsupporting

confidence: 62%

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

et al. 2010

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Based on the complexity and difficult understanding on low-temperature resistivity minimum in manganites, the effect of ferroelectric-poling-induced strain on Kondo-type transport behavior was systemically investigated as a function of magnetic field for La 0.7 Ca 0.15 Sr 0.15 MnO 3 manganite thin films grown on ferroelectric 0.67Pb͑Mg 1/3 Nb 2/3 ͒O 3 -0.33PbTiO 3 ͑PMN-PT͒ single-crystal substrates. The results show that the lowtemperature resistivity upturn is mainly caused from quantum correction effects driven by electron-electron interaction and inelastic scattering. Whether the PMN-PT substrate is in unpoled or poled state, the temperature where the resistivity shows an upturn near 15 K shifts to a higher temperature under magnetic field. The ferroelectric poling induces a reduction in the in-plane tensile strain and thus the lattice distortion of the film, which suppresses the resistivity upturn. These prove that the local lattice distortion relevant to the strain of the film is one of the main disorders that influence the resistivity upturn. The present results will be meaning to understand the physical mechanism of Kondo-type behavior at low temperature in colossal magnetoresistance manganites.

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Section: Introductionsupporting

confidence: 62%

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

et al. 2010

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“…A similar low-temperature minimum of the resistivity was also observed in manganite thin films [23], and its origin has been discussed in detail by Rozenberg et al [24]. They argue against an interpretation in terms of weaklocalization effects, in which case the field dependence would be much weaker, and interpret the resistivity behavior as due to spin-polarized inter-grain tunneling conduction.…”

mentioning

confidence: 73%

Disorder effects at low temperatures in La0.7−xYxCa0.3MnO3 manganites

Gusmao¹,

Ghivelder²,

Freitas³

et al. 2003

Solid State Communications

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With the aim of probing the effect of magnetic disorder in the low-temperature excitations of manganites, specific-heat measurements were performed in zero field, and in magnetic fields up to 9 T in polycrystalline samples of La 0.7−x Y x Ca 0.3 MnO 3 , with Y concentrations x = 0, 0.10, and 0.15. Yttrium doping yielded the appearance of a cluster-glass state, giving rise to unusual low-temperature behavior of the specific-heat. The main feature observed in the results is a strong enhancement of the specific-heat linear term, which is interpreted as a direct consequence of magnetic disorder. The analysis was further corroborated by resistivity measurements in the same compounds.

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“…The low-temperature resistivity upturn (minimum) in manganites is generally attributed to the following sources: grain-boundary scattering, phase separation, the Kondo effect, and electron-electron localization [21,[37][38][39][40]. The Kondo contribution arises due to the scattering from a magnetic impurity in a nonmagnetic lattice.…”

Section: Resultsmentioning

confidence: 99%

Comparative study of transport properties of compressively strained epitaxial and polycrystalline La_0.88Sr_0.12MnO₃ thin films

Prasad

Singh

Prellier

et al. 2009

Physica Status Solidi (b)

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We report a comparative study of the magnetoelectrical properties of epitaxial and polycrystalline thin films of lightly doped manganite La0.88Sr0.12MnO3 (LSMO). The LSMO thin films are deposited on single‐crystal LaAlO3 (LAO/(100)) and yttria‐stabilized ZrO2 (ZO/(100)) substrates by on‐axis DC magnetron sputtering from high‐density targets prepared by a wet chemical route. Films deposited on LAO (6 nm and 35 nm thick) are epitaxial and AFM investigations show clean surface morphology. In contrast, films on ZO (20 nm and 35 nm) are polycrystalline. Small variation in grain size is seen in the surface morphology of films on ZO. Both 6 nm and 35 nm thick films on LAO show sharp I–M transitions around the TC with TIM being 275 K and 285 K, respectively. The TIM of films on ZO is drastically suppressed as compared to the same for films on LAO. The large enhancement in TC and hence TIM of LSMO films on LAO has been explained in terms of the compressive strain arising due to the mismatch between the lattice parameters of LAO and LSMO. The absence of such strain in LSMO films on ZO accounts for the lower TIM values. The LSMO/LAO films also show large magnetoresistance only in the vicinity of the TIM and it decreases strongly on lowering and increasing the temperature. In contrast, the LSMO/ ZO films show relatively lower MR spreading over a wider temperature range. The electrical transport of all the films, both in the PM as well as the FM regions have been analyzed in the framework of several models and the suitability of each model has been discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Low-temperature resistivity minima in colossal magnetoresistiveLa0.7Ca0.3MnO

Cited by 141 publications

References 17 publications

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

Disorder effects at low temperatures in La0.7−xYxCa0.3MnO3 manganites

Comparative study of transport properties of compressively strained epitaxial and polycrystalline La_0.88Sr_0.12MnO₃ thin films

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Low-temperature resistivity minima in colossal magnetoresistiveLa0.7Ca0.3MnO

Cited by 141 publications

References 17 publications

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

Effects of ferroelectric-poling-induced strain on the quantum correction to low-temperature resistivity of manganite thin films

Disorder effects at low temperatures in La0.7−xYxCa0.3MnO3 manganites

Comparative study of transport properties of compressively strained epitaxial and polycrystalline La0.88Sr0.12MnO3 thin films

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Comparative study of transport properties of compressively strained epitaxial and polycrystalline La_0.88Sr_0.12MnO₃ thin films