Low-temperature oxidation of SiGe by liquid-phase deposition

Chen, Y.H.; Kung, Chung‐Yuan; Hwang, Joon; Lin, Hang-Yi; Chan, Hsun Joung; Chen, P.S.

doi:10.1016/j.apsusc.2008.02.120

Cited by 3 publications

(1 citation statement)

References 14 publications

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“…No Ge pile up was observed at the SiO 2 /SiGe interface in the Auger electron spectroscopy depth profile. 13) After annealing, the leakage current density was significantly improved by one order of magnitude, indicating an improvement in LPD-SiO 2 during the high-temperature densification. Because water residue in the LPD-SiO 2 may also affect the quality of the oxide, the annealing could drive the water molecules out of the thin LPD-SiO 2 film and thus improve the quality of the LPD-SiO 2 .…”

Section: Methodsmentioning

confidence: 94%

Investigation of Electrical Properties of Thermally Annealed SiGe Metal–Oxide–Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide

Kung¹,

Hwang

Chen

et al. 2009

Jpn. J. Appl. Phys.

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Room-temperature (30 C) silicon dioxide (SiO 2 ) has been grown on strained SiGe layers by liquid-phase deposition (LPD). Metal-oxidesemiconductor (MOS) capacitors have also been fabricated by annealing at various temperatures (200 -400 C) in nitrogen. A very low leakage current density of 3:25 Â 10 À8 A/cm 2 was obtained at an electric field of 10 MV/cm for as-grown LPD-SiO 2 films. After annealing, the leakage current density decreased by one order of magnitude and the fixed oxide charge density also significantly decreased to 4:7 Â 10 9 cm À2 in the capacitor annealed at 400 C. The mechanism by which this occurred is explained.

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Section: Methodsmentioning

confidence: 94%