Low temperature microwave characteristics of 0.1μm gate-length pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x=0.85 and 0.95) MODFET's

Molecular beam epitaxy growth of Iny2Al1−y2As/In0.73Ga0.27As/Iny1Al1−y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

“…1,2 In the case of pseudomorphic heterostructures, higher indium compositions (x) of In x Ga 1Ϫx As channel are reported to be associated with reduced scattering resulting from optical phonons, alloy disorder 3 and higher low-field mobility as well as high-field saturated velocity arising from the larger intervalley separations. 1,2 In the case of pseudomorphic heterostructures, higher indium compositions (x) of In x Ga 1Ϫx As channel are reported to be associated with reduced scattering resulting from optical phonons, alloy disorder 3 and higher low-field mobility as well as high-field saturated velocity arising from the larger intervalley separations.…”