Molecular beam epitaxy growth of Iny2Al1−y2As/In0.73Ga0.27As/Iny1Al1−y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

Jiang, Chao

doi:10.1116/1.589218

Cited by 3 publications

(1 citation statement)

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“…The value obtained was 4.36ϫ10 16 /V s at room temperature, which is among the best ever reported for a similar structure. [11][12][13] Double-side-doped ͑DH͒-HEMT structures are attractive for high power applications as they provide higher current handling capability and better linearity. 14,15 The optimized growth conditions obtained in the case of single-side-doped ͑SH͒-HEMT have been applied to grow DH-HEMT structures and investigate their electrical properties as a function of dopant concentration.…”

Section: Resultsmentioning

confidence: 99%

Optimization of InxGa1−xAs/InyAl1−yAs high electron mobility transistor structures grown by solid-source molecular beam epitaxy

Zheng

Radahakrishnan

Yoon

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inSuppression of surface segregation of silicon dopants during molecular beam epitaxy of ( 411 ) A In 0.75 Ga 0.25 As ∕ In 0.52 Al 0.48 As pseudomorphic high electron mobility transistor structures Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecularbeam epitaxy Molecular beam epitaxial growth and characterization of strain-compensated Al 0.3 In 0.7 P/InP/Al 0.3 In 0.7 P metamorphic-pseudomorphic high electron mobility transistors on GaAs substrates Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy Al 1−x In x As 1−y Sb y / GaSb heterojunctions and multilayers grown by molecular beam epitaxy for effectivemass superlatticesWe report on the optimization of InP-based In x Ga 1Ϫx As/In y Al 1Ϫy As pseudomorphic high electron mobility transistor ͑PHEMT͒ structures to achieve the highest possible two-dimensional-electron gas ͑2DEG͒ density and mobility. The layer structures are grown by solid-source molecular beam epitaxy with a valved phosphorus cracker cell. The single-side-doped PHEMT structure with a ␦-doping concentration of 6ϫ10 12 cm Ϫ2 exhibits a 2DEG sheet density of 3.93ϫ10 12 cm Ϫ2 with a mobility of 11100 cm 2 /V s at 300 K. The double-side-doped PHEMT structure with a bottom ␦-doping concentration of 1ϫ10 12 cm Ϫ2 and a top ␦-doping concentration of 5ϫ10 12 cm Ϫ2 gives a 2DEG sheet density of 4.57ϫ10 12 cm Ϫ2 with a mobility of 10 900 cm 2 /V s at 300 K. The electrical, optical and structural properties of the PHEMT structures were characterized by Hall, photoluminescence, and x-ray diffraction measurements.

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Section: Resultsmentioning

confidence: 99%

Optimization of InxGa1−xAs/InyAl1−yAs high electron mobility transistor structures grown by solid-source molecular beam epitaxy

Zheng

Radahakrishnan

Yoon

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study

Babiker¹,

Asenov²,

Roy³

et al. 1999

Solid-State Electronics

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Transport properties of modulation-doped InAs-inserted-channel In0.75Al0.25As/In0.75Ga0.25As structures grown on GaAs substrates

Richter

Koch

Matsuyama

et al. 2000

Applied Physics Letters

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We report on gate voltage dependent electron transport in modulation-doped In0.75Al0.25As/In0.75Ga0.25As heterostructures with strained InAs-inserted-channels grown on GaAs substrates. At temperatures of T=4.2 K we achieve mobilities of up to μ=215 000 cm2(V s)−1 and electron densities of nS=1.2×1012 cm−2 for the highest measured gate voltage of Vg=20 V. The electron effective mass m*=0.036 me is determined by temperature dependent Shubnikov–de Haas measurements. The observation of an anisotropic mobility when the first excited subband becomes populated proves interface scattering to be the limiting mechanism for the electron mobility.

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Molecular beam epitaxy growth of Iny2Al1−y2As/In0.73Ga0.27As/Iny1Al1−y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

Abstract: Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP

Cited by 3 publications

References 9 publications

Optimization of InxGa1−xAs/InyAl1−yAs high electron mobility transistor structures grown by solid-source molecular beam epitaxy

Optimization of InxGa1−xAs/InyAl1−yAs high electron mobility transistor structures grown by solid-source molecular beam epitaxy

Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study

Transport properties of modulation-doped InAs-inserted-channel In0.75Al0.25As/In0.75Ga0.25As structures grown on GaAs substrates

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