As artificial intelligence (AI) systems become increasingly ubiquitous, the topic of AI governance for ethical decision-making by AI has captured public imagination. Within the AI research community, this topic remains less familiar to many researchers. In this paper, we complement existing surveys, which largely focused on the psychological, social and legal discussions of the topic, with an analysis of recent advances in technical solutions for AI governance. By reviewing publications in leading AI conferences including AAAI, AA-MAS, ECAI and IJCAI, we propose a taxonomy which divides the field into four areas: 1) exploring ethical dilemmas; 2) individual ethical decision frameworks; 3) collective ethical decision frameworks; and 4) ethics in human-AI interactions. We highlight the intuitions and key techniques used in each approach, and discuss promising future research directions towards successful integration of ethical AI systems into human societies.

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The characteristics of Si-doped In0.52Al0.48As layers as a function of silicon doping ranging from 1×1017 to 4×1018 cm−3 are analyzed by low-temperature photoluminescence (PL), Raman spectroscopy, and Hall effect measurements. When the sample temperature is increased from 4 K, the PL peak energy exhibits an inverted S-shaped dependence which is characteristic of carrier localization. This effect was more prominent at lower doping levels, but weakened at high doping levels due to a possible reduction in the donor binding energy. The peak energy variation at temperatures higher than ≊100 K follows the usual band-edge variation with temperature, suggesting that the PL arises from band-to-band transitions. While the PL linewidth of the undoped and moderately doped samples decreases and then increases with temperature, a near-monotonic increase in the linewidth due to thermal broadening was observed in highly doped samples. Supported by observations of a reduction in both the AlAs-like and InAs-like longitudinal-optic (LO) phonon frequencies and a broadening of the LO phonon line shape as the doping level is increased, the PL intensity also showed in increasing degrees at higher doping levels, a temperature dependence which is characteristic of disordered and amorphous materials.

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