Low-temperature heat capacities of silicon carbide

Lin, Guo-Yau; Ho, J. C.; Dandekar, Dattatraya P.

doi:10.1063/1.338302

Cited by 6 publications

(2 citation statements)

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“…Usually, the D value is determined from the heat capacity, and the latter is not known well for 4H-SiC. It varies from about 990 K at 10 K [20] to 1100-1120 K at 300 K, if being derived from heat capacity and sound velocity measurements [21]. We explored the fact that the thermo-optic coefficient is proportional to heat capacity and the derivative of the effective gap E (i.e.…”

Section: Experimental Data and Analysismentioning

confidence: 99%

Application of a time-resolved four-wave mixing technique for the determination of thermal properties of 4H–SiC crystals

Ščajev¹,

Jarašiūnas²

2009

J. Phys. D: Appl. Phys.

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We applied a time-resolved four-wave mixing technique for the determination of thermal diffusivity, sound velocity, thermo-optic and photoelastic coefficients in heavily doped n-type and p-type 4H–SiC substrates. Spatial modulation of thermal properties was achieved by intraband carrier excitation using a light-interference pattern at 1064 nm and subsequent carrier thermalization. Decay of the light-induced thermal grating at its various periods and sample temperatures was monitored by diffraction of a delayed probe pulse at 532 nm wavelength. The grating decay kinetics provided the thermal diffusivity DT = 0.94 cm2 s−1, thermo-optic coefficient dn/dT = 3.6 × 10−5 K−1 and effective photoelastic constant at 300 K. Temperature dependences of dn/dT and thermal expansion almost matched that of the heat capacity, Cp(T), and correlated well with the Eg(T) dependence.

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Section: Experimental Data and Analysismentioning

confidence: 99%

Application of a time-resolved four-wave mixing technique for the determination of thermal properties of 4H–SiC crystals

Ščajev¹,

Jarašiūnas²

2009

J. Phys. D: Appl. Phys.

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“…A series of theoretical calculations based on the elastic constant data (Slack, 1964; Singh and Varshni, 1981; Zywietz et al , 1996) had been carried out to investigate the Debye temperature of SiC. Experimentally, the Debye temperature has previously been obtained on a ceramic sample by measuring heat capacity at low temperatures, with no specific polytype of SiC being indicated (Lin et al , 1987). It is well known that SiC is a compound which exhibits polytypes, and there are over 200 polytypes reported in the literature.…”

Section: Introductionmentioning

confidence: 99%