1996
DOI: 10.1016/s0040-6090(96)08849-9
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Solid state reactions in cobalt/amorphous-silicon multilayer thin films

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Cited by 10 publications
(2 citation statements)
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“…The observed grain could be an inter-metallic Co x Si y compound formed after cobalt diffusion across the oxide barrier. According to Shim et al [17], the activation energy for the formation of CoSi (1.71 eV) is smaller than that required for the formation of Co 2 Si (2.34 eV). This implies that the nucleation barrier of CoSi is rather low and thus we assume CoSi to be the first crystalline phase formed.…”
Section: Resultsmentioning
confidence: 96%
“…The observed grain could be an inter-metallic Co x Si y compound formed after cobalt diffusion across the oxide barrier. According to Shim et al [17], the activation energy for the formation of CoSi (1.71 eV) is smaller than that required for the formation of Co 2 Si (2.34 eV). This implies that the nucleation barrier of CoSi is rather low and thus we assume CoSi to be the first crystalline phase formed.…”
Section: Resultsmentioning
confidence: 96%
“…However, many other authors have reported that CoSi is the first phase formed among the several phases of Cobalt silicides. [14,15]. However, Co 2 Si as a first phase of Cobalt silcides is also reported in the literature [16].…”
Section: Introductionmentioning
confidence: 81%