1999
DOI: 10.1007/s003390051463
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Low-temperature growth of epitaxial ZnO films on (001) sapphire by ultraviolet- assisted pulsed laser deposition

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Cited by 36 publications
(14 citation statements)
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“…6 reveal that the ZnO layers are stoichiometric, with a composition of 50.7 at.% of Zn and 49.3 at.% of oxygen. This result confirms the result of EDS and is in good agreement with other results [23].…”
Section: Rbs Analysissupporting
confidence: 93%
“…6 reveal that the ZnO layers are stoichiometric, with a composition of 50.7 at.% of Zn and 49.3 at.% of oxygen. This result confirms the result of EDS and is in good agreement with other results [23].…”
Section: Rbs Analysissupporting
confidence: 93%
“…Till today, many different techniques such as chemical vapor deposition [6], plasma-enhanced chemical vapor deposition [7], sol-gel [8], reactive evaporation [9], rf magnetron sputtering [10], spray pyrolysis [11], molecular beam epitaxy [12], pulsed laser deposition [13], metal organic chemical vapor deposition [14], etc. have been used for the deposition of ZnO thin films.…”
Section: Introductionmentioning
confidence: 99%
“…4 They are also considered as promising transparent conducting oxide film and good latticematching substrates for the epitaxial growth of GaN and InGaN films. 5 Until recently, many different techniques such as metal organic chemical vapor deposition, 6 molecular beam epitaxy, 7 sputtering, 8 and pulsed laser deposition (PLD) 9 have been used in the preparation of ZnO thin films.…”
Section: Introductionmentioning
confidence: 99%