Low temperature growth of (100) HgCdTe layers with DtBTe in metalorganic vapor phase epitaxy

Yasuda, K.; Hatano, H.; Touati, Farid; Kawamoto, K.; Maejima, T.; Minamide, M.

doi:10.1007/bf02653058

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Movpe Growth System and Precursors1

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Cited by 4 publications

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“…They are the vertical geometry reactor, used primarily with DAG, and the horizontal reactor that has been used for both DAG and IMP growth. For growth at reduced temperatures, ditertiarybutyltelluride may be a promising precursor, using which Yasuda et al 30 have demonstrated direct alloy growth at 275°C. The precursors are injected through a common fast flow switching manifold using Pd diffused H 2 gas.…”

Section: Movpe Growth System and Precursorsmentioning

confidence: 99%