Metal‐Organic Vapor Phase Epitaxy (MOVPE) Growth

Maxey, C. D.

doi:10.1002/9780470669464.ch6

Cited by 5 publications

(3 citation statements)

References 44 publications

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“…MOVPE of HgCdTe has been the standard manufacturing process at Leonardo since 2003 9 . Currently, growth is on 100 mm (4") GaAs wafers with an orientation of a few degrees off (100).…”

Section: Review Of Leonardo Lmapd Technology 21 Movpe-grown Hgcdtementioning

confidence: 99%

Leonardo UK high performance shortwave APDs for astronomy

Baker,

Hicks,

Maxey

et al. 2023

Infrared Sensors, Devices, and Applications XIII

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“…MOVPE of HgCdTe has been the standard manufacturing process at Leonardo since 2003 9 . Currently, growth is on 100 mm (4") GaAs wafers with an orientation of a few degrees off (100).…”

Section: Review Of Leonardo Lmapd Technology 21 Movpe-grown Hgcdtementioning

confidence: 99%

Leonardo UK high performance shortwave APDs for astronomy

Baker,

Hicks,

Maxey

et al. 2023

Infrared Sensors, Devices, and Applications XIII

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“…The arrays are grown by Metal Organic Vapour Phase Epitaxy (MOVPE), 14 which allows for a precise control and variable profiles of the thickness, so complex bandgaps and doping concentrations can be used to define the structure of the diode. The diode and its mesa cone form a mesa heterojunction.…”

Section: Detector Design 21 Hgcdte Materials and Avalanche Processmentioning

confidence: 99%

First tests of a 1 megapixel near-infrared avalanche photodiode array for ultra-low background space astronomy

Claveau

Bottom

Jacobson

et al. 2022

X-Ray, Optical, and Infrared Detectors for Astronomy X

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Spectroscopy of Earth-like exoplanets and ultra-faint galaxies are priority science cases for the coming decades. Here, broadband source flux rates are measured in photons per square meter per hour, imposing extreme demands on detector performance, including dark currents lower than 1 e-/pixel/kilosecond, read noise less than 1 e-/pixel/frame, and large formats. There are currently no infrared detectors that meet these requirements. The University of Hawai'i and industrial partners are developing one promising technology, linear mode avalanche photodiodes (LmAPDs), using fine control over the HgCdTe bandgap structure to enable noise-free charge amplification and minimal glow.Here we report first results of a prototype megapixel format LmAPD operated in our cryogenic testbed. At 50 Kelvin, we measure a dark current of about 3 e-/pixel/kilosecond, which is due to an intrinsic dark current consistent with zero (best estimate of 0.1 e-/pixel/kilosecond) and a ROIC glow of 0.08 e-/pixel/frame. The read noise of these devices is about 10 e-/pixel/frame at 3 volts, and decreases by 30% with each additional volt of bias, reaching 2 e-at 8 volts. Upcoming science-grade devices are expected to substantially improve upon these figures, and address other issues uncovered during testing.

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“…x Cd x Te) is still the main material for the middle wavelength infrared (MWIR: 3-5 lm), as well as the long wavelength infrared (LWIR: 8-12 lm) detectors. The development of advanced epitaxial techniques such as molecular beam epitaxy (MBE) 7 and metal organic chemical vapour deposition (MOCVD) 8 allows for the construction of complex HgCdTe heterostructure-based IR detectors for use in HOT conditions.…”

Section: Introductionmentioning

confidence: 99%

Higher Operating Temperature IR Detectors of the MOCVD Grown HgCdTe Heterostructures

Madejczyk

Gawron

Kębłowski

et al. 2020

Journal of Elec Materi

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This paper summarizes progress in metal organic chemical vapour deposition (MOCVD) technology achieved in recent years at the Institute of Applied Physics, Military University of Technology and VIGO System S.A. MOCVD with a wide range of composition and donor/acceptor doping and without post-growth annealing is a very convenient tool for the deposition of HgCdTe epilayers used for uncooled infrared detectors. Particular attention is focused on: surface morphology improvement, doping issues, diffusion processes during growth study, substrate issues, crystallographic orientation selection. In this respect, MOCVD technology improvement influencing IR detector parameters is shown. CdTe buffer layer deposition allows HgCdTe heterostructure growth on GaAs substrates. Theoretical modelling using APSYS platform supports designing and better understanding of the carrier transport mechanism in detector’s structures. Secondary ion mass spectrometry profiles allows to compare projected and obtained structures and revealed diffusion processes of the elements. A wide range of different types of infrared detectors operating at high operating temperature conditions has been constructed: photoresistors, non-equilibrium photodiodes, dual-band photodiodes, barrier and multiple detectors. The methodical research efforts contributed to the time constant reduction are important in many detector applications. Future challenges and prospects are also discussed.

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Metal‐Organic Vapor Phase Epitaxy (MOVPE) Growth

Cited by 5 publications

References 44 publications

Leonardo UK high performance shortwave APDs for astronomy

Leonardo UK high performance shortwave APDs for astronomy

First tests of a 1 megapixel near-infrared avalanche photodiode array for ultra-low background space astronomy

Higher Operating Temperature IR Detectors of the MOCVD Grown HgCdTe Heterostructures

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