Low-Temperature Epitaxial Growth of Single Crystalline Silicon from Silane

Richman, D.; Arlett, Robert H.

doi:10.1149/1.2412092

Cited by 22 publications

(4 citation statements)

References 3 publications

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“…Species present on a Si surface in a SiH4 VPE reactor include SiH4, SiHz, Si, Hz and H. As discussed above, only SiHz, Si and H are strongly adsorbed. Early experiments by Richman and Arlett (1969) showed that the presence of hydrogen interferes with the low-temperature growth of single crystalline layers of Si. Using He or Ar as the carrier gas was found to allow single crystalline Si growth at lower temperatures.…”

Section: Surface Chemistrymentioning

confidence: 99%

Epitaxy

Stringfellow

1982

Rep. Prog. Phys.

110

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The future growth of solid-state electronics depends on the ability to produce new high-performance semiconductor devices. This requires the development of new semiconductor materials and the ability to grow special structures, particularly those with very thin layers. Epitaxy, the set of techniques used to produce highly perfect semiconductor layers, is the topic of this review. The basic concepts underlying epitaxy, thermodynamics, mass transport, surface kinetics and defect generation are discussed first. The specific epitaxial techniques are then discussed and compared in this framework. Finally, specific epitaxial techniques are discussed. Liquid-phase epitaxy (LPE) and vapour-phase epitaxy (VPE), including organometallic vapour-phase epitaxy (OMVPE) and molecular-beam epitaxy (MBE), are discussed in detail.

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Section: Surface Chemistrymentioning

confidence: 99%

Epitaxy

Stringfellow

1982

Rep. Prog. Phys.

110

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“…Recently helium was reported to have been used as a carrier gas for silicon iso-epitaxy (19). We have seen that spinel wafers processed in such a fashion do not craze.…”

Section: Table I the Magnesium And Aluminum Concentrations As Determi...mentioning

confidence: 96%

The Etch Rate and Deterioration of Magnesium Aluminum Spinel in Hydrogen

Green

1972

J. Electrochem. Soc.

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Magnesium aluminum spinel is commonly used as a substrate for the heteroepitaxial chemical vapor deposition of silicon. Hydrogen is usually used as a carrier gas, and a high‐temperature pretreatment in hydrogen is typically performed on the substrate with the idea that abrasion polishing damage will either be annealed or removed. In this paper the rate of material removal in hydrogen of stoichiometric spinel is presented as a function of crystallo‐graphic orientation, time, and temperature. For example, at 1000°C the rate is ∼1 Aå/min; at 1300°C,∼100 Aå/min. However, it was found that such a hydrogen ambient promotes crazing of the substrate surface, thus degrading its suitability for heteroepitaxy. This phenomenon was studied, and it is suggested that the cause is due to a preferential out‐diffusion of magnesium from the surface, which induces a strain large enough to result in brittle fracture. It has been shown that the crazing is obviated by the use of helium as a carrier gas.

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“…Partial etching can more or less deteriorate the single crystal surface and may result in either polycrystalline growth or in the production of a layer with a high density of crystal imperfections. This can be prevented by lowering the deposition temperature which is possible according to Richman and Arlett (7) with silane in the SiH4/He system for homoepitaxial silicon. Studies for heteroepitaxial silicon on sapphire and spinel from this system were published by several authors (8)(9)(10) and modified to the SiH4/He/H2 system by Manasevit for silicon on spinel (ll).…”

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confidence: 99%

Optimization of the Deposition Conditions for Epitaxial Silicon Films on Czochralski Sapphire in the Silane‐Hydrogen System

Druminski

1980

J. Electrochem. Soc.

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The deposition of epitaxial silicon films on (1̅012) Czochralski sapphire from the silane/hydrogen system was investigated for growth temperatures from 880° to 980°C and for growth rates from 0.2 to 6.0 μm/min. The film quality was evaluated by optical absorption measurements. The temperature range, in which epitaxial film quality was obtained, shifts with increasing growth rates to higher deposition temperatures. This epitaxial temperature range is rather broad, e.g., 915°–965°C for 0.2–0.5 μm/min and 935°–985°C for 5.3–6.0 μm/min. A region for the optimum epitaxial deposition conditions, very suitable for MOS applications, is defined by the minimum values obtained from the optical absorption measurements. At temperatures below 915°C, decreasing crystalline quality was observed due to an increasing fraction of polycrystalline silicon. In addition the influence of the H2O content on the crystalline quality of the silicon films was investigated; for the production of a good epitaxial silicon film the H2O impurity fraction must be smaller than 1 ppm, especially in the low temperature region.

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Low-Temperature Epitaxial Growth of Single Crystalline Silicon from Silane

Abstract: Table I. Some data on gallium containing phosphors Composition Efficiency, % ~max(nm) Emission, quv ~o~ room temp Refl., % (254 rim) (20 kv) T~o, ~

Cited by 22 publications

References 3 publications

Epitaxy

Epitaxy

The Etch Rate and Deterioration of Magnesium Aluminum Spinel in Hydrogen

Optimization of the Deposition Conditions for Epitaxial Silicon Films on Czochralski Sapphire in the Silane‐Hydrogen System

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