Low-temperature epitaxial growth of in-situ doped silicon films

Kircher, R.; Furuno, M.; Murota, Junichi; Ono, S.

doi:10.1016/0022-0248(91)90782-z

Cited by 4 publications

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“…6,7 They were cleaned in a 4:1 solution of H 2 SO 4 and H 2 O 2 , high purity deionized ͑DI͒ water, and 2% HF with a final rinse in DI water immediately before loading into the ECR apparatus. After etching the Si epitaxial films for a certain period, the concentrations of the atoms adsorbed on the Si surface were estimated from the X-ray photoelectron spectroscopy ͑XPS͒ intensities, using the photoexcitation probability in the literature 8 for Cl on Si.…”

Section: Methodsmentioning

confidence: 99%

“…The substrates used were high quality undoped, P-doped ͑1.0 ϫ 10 20 cm Ϫ3 , 4.0 ϫ 10 19 cm Ϫ3 , and 1.0 ϫ 10 19 cm Ϫ3 ͒, and B-doped ͑8.0 ϫ 10 20 cm Ϫ3 and 3.0 ϫ 10 20 cm Ϫ3 ͒ Si films epitaxially grown on Si͑100͒ wafers by ultraclean low-pressure chemical vapor deposition. 6,7 They were cleaned in a 4:1 solution of H 2 SO 4 and H 2 O 2 , high purity deionized ͑DI͒ water, and 2% HF with a final rinse in DI water immediately before loading into the ECR apparatus. After etching the Si epitaxial films for a certain period, the concentrations of the atoms adsorbed on the Si surface were esti-mated from the X-ray photoelectron spectroscopy ͑XPS͒ intensities, using the photoexcitation probability in the literature 8 for Cl on Si.…”

Section: Methodsmentioning

confidence: 99%

“…After etching the Si epitaxial films for a certain period, the concentrations of the atoms adsorbed on the Si surface were esti-mated from the X-ray photoelectron spectroscopy ͑XPS͒ intensities, using the photoexcitation probability in the literature 8 for Cl on Si. In the case of B on Si, the photoexcitation probability was determined from our XPS measurements on the standard sample, 7 the concentration of which was measured by secondary-ion mass spectroscopy ͑SIMS͒. The amount of segregated B on the surface was calculated by subtracting the contribution of the B atoms in the epitaxial film to the XPS intensity.…”

Section: Methodsmentioning

confidence: 99%

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Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma

Kanetsuna

Mizutani

Murota

2001

J. Electrochem. Soc.

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Chlorine etching of heavily doped single-crystalline Si͑100͒ using electron cyclotron resonance plasma has been investigated focusing on surface adsorption and reaction and impurity segregation. The etch rate of undoped and P-doped Si is nearly equal to the square of the concentration of Cl atoms adsorbed on the etched surface. On the other hand, in the case of B-doped Si, B segregation up to the monatomic layer concentration on the etched surface is observed, and the etching is suppressed by the segregated B atoms. Thus, the difference in the etching characteristics of doped Si and undoped Si is caused by the concentration difference of the adsorbed Cl atom and the impurity segregation on the etched surface.Dry etching is widely used in the microelectronics industry and is very important in ultralarge-scale integrated circuit fabrication, despite the fact that dry etching processes are not fully understood. Electron cyclotron resonance ͑ECR͒ plasma etching has been widely used to satisfy both high selectivity and high anisotropy simultaneously, by utilizing advantages such as its low ion energy for low damage and long mean free paths for anisotropy. 1,2 In the dry etching of silicon with halogen-based gases, it is well known that the etch rate of n-type silicon increases and that of p-type silicon decreases with increasing dopant concentration. 3-5 Also, the etching reaction has been discussed with respect to the surface modified layer and band bending. In such research, polycrystalline Si is mainly employed or the doping level is not very high. Therefore, the influence of the crystallinity on the etching characteristics and the surface adsorption characteristics is unclear. It is much more important to use heavily doped single-crystalline Si for quantitatively investigating the surface adsorption and the reaction of the reactant gases.In the present work, we used epitaxial Si͑100͒, including undoped, heavily P-doped, and B-doped films to study the process of etching by ECR chlorine plasma. Cl adsorption and reaction, as well as impurity segregation, on the etched surface have been investigated, and the effects of the atoms adsorbed on the etched surface on the etching characteristics are discussed. ExperimentalTo etch the Si surface using chlorine plasma, we employed the ECR plasma apparatus schematically shown in Fig. 1. The ultimate vacuum level of the reaction chamber was ϳ7 ϫ 10 Ϫ6 Pa. The Cl 2 pressure (p Cl2 ͒ was monitored using a Baratron gauge. The chlorine plasma was continuously generated for 30-4800 s at 0.13-1.1 Pa with the supplied microwave ͑2.45 GHz͒ power of 500 W and transported without applying any extraction bias voltage.The substrates used were high quality undoped, P-doped ͑1.0 ϫ 10 20 cm Ϫ3 , 4.0 ϫ 10 19 cm Ϫ3 , and 1.0 ϫ 10 19 cm Ϫ3 ͒, and B-doped ͑8.0 ϫ 10 20 cm Ϫ3 and 3.0 ϫ 10 20 cm Ϫ3 ͒ Si films epitaxially grown on Si͑100͒ wafers by ultraclean low-pressure chemical vapor deposition. 6,7 They were cleaned in a 4:1 solution of H 2 SO 4 and H 2 O 2 , high purity deionized ͑DI͒ water, an...

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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