A supersonic molecular beam study of the chemisorption of PH3 on the Si(100) surface

Maity, N.; Xia, Li-Qun; Roadman, S. E.; Engstrom, J. R.

doi:10.1016/0039-6028(95)00834-9

Cited by 9 publications

(7 citation statements)

References 32 publications

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“…The most stable PH structure is (C1), which consists of a PH unit in a dimer-bridge site adjacent to a monohydride dimer. This structure, which contains PH in a three-membered ring, is 0.88 eV more stable than the (B1) structure, previously considered to be the most stable PH x structure [14,18]. The most stable structures containing a bare phosphorus atom are (D1) and (D2), which both contain the P atom in an end-bridge site, an adjacent monohydride dimer, and a single H on one of the bridged dimers.…”

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confidence: 80%

Phosphine Dissociation on the Si(001) Surface

et al. 2004

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Density functional calculations are performed to identify features observed in STM experiments after phosphine (PH3) dosing of the Si(001) surface. On the basis of a comprehensive survey of possible structures, energetics, and simulated STM images, three prominent STM features are assigned to structures containing surface bound PH2, PH, and P, respectively. Collectively, the assigned features outline for the first time a detailed mechanism of PH3 dissociation and P incorporation on Si(001).

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confidence: 80%

Phosphine Dissociation on the Si(001) Surface

et al. 2004

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“…A widely held view is that roomtemperature dissociation stops at surface bound PH 3 and PH 2 species and that further dissociation to surface bound P and subsequent incorporation into the surface requires elevated temperatures. 15,17,20 However, this view of limited PH 3 dissociation at room temperature is not compatible with the relatively large number of intermediates observed as distinct features in STM experiments. Figure 1 shows large scale STM images of the Si͑001͒ surface following low-dose PH 3 exposure at room temperature.…”

Section: Introductionmentioning

confidence: 99%

“…Although the dissociation chemistry of the PH 3 /Si͑001͒ system has been extensively studied with STM, 3,5-12 low energy electron diffraction, 13,14 desorption experiments, [14][15][16][17][18][19] many kinds of spectroscopy, [7][8][9][10][13][14][15]20,21 and theory, 8,20,[22][23][24][25] the chemical pathways for PH 3 dissociation on the surface and subsequent P incorporation into the surface remain largely unclear. It is widely accepted that most ͑if not all͒ surface bound PH 3 dissociates into PH 2 + H, however, little is known about how and under what conditions, further dissociation takes place.…”

Section: Introductionmentioning

confidence: 99%

Phosphine adsorption and dissociation on the Si(001) surface: Anab initiosurvey of structures

et al. 2005

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We report a comprehensive ab initio survey of possible dissociation intermediates of phosphine ͑PH 3 ͒ on the Si͑001͒ surface. We assign three scanning tunneling microscopy ͑STM͒ features, commonly observed in room-temperature dosing experiments, to PH 2 + H, PH+ 2H, and P + 3H species, respectively, on the basis of calculated energetics and STM simulation. These assignments and a time series of STM images which shows these three STM features converting into another, allow us to outline a mechanism for the complete dissociation of phosphine on the Si͑001͒ surface. This mechanism closes an important gap in the understanding of the doping process of semiconductor devices.

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“…In another example, phosphine has been used to add phosphorous to the surface. The initial probability of reaction for PH 3 on Si(111)-(7x7) was found to decrease with increasing substrate temperature and with increasing kinetic energy of the incident beam, a signature of precursor-mediated dissociation [513]. It also increases sharply, by a factor of approximately 4 to 5, upon reconstruction from the reconstructed (7x7) to the unreconstructed (1x1) surfaces, and exhibits an autocatalytic behavior consistent with a mechanism in which submonolayer coverages of P(ads) are capable of lifting the (7x7) reconstruction [514].…”

Section: CI Silicon Surfacesmentioning

confidence: 98%

Use of molecular beams for kinetic measurements of chemical reactions on solid surfaces

Zaera

2017

Surface Science Reports

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In this review we survey the contributions that molecular beam experiments have provided to our understanding of the dynamics and kinetics of chemical interactions of gas molecules with solid surfaces. First, we describe the experimental details of the different instrumental setups and approaches available for the study of these systems under the ultrahigh vacuum conditions and with the model planar surfaces often used in modern surface-science experiments. Next, a discussion is provided of the most important fundamental aspects of the dynamics of chemical adsorption that have been elucidated with the help of molecular beam experiments, which include the development of potential energy surfaces, the determination of the different channels for energy exchange between the incoming molecules and the surface, the identification of adsorption precursor states, the understanding of dissociative chemisorption, the determination of the contributions of corrugation, steps, and other structural details of the surface to the adsorption process, the effect to molecular steering, the identification of avenues for assisting adsorption,

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A supersonic molecular beam study of the chemisorption of PH3 on the Si(100) surface

Cited by 9 publications

References 32 publications

Phosphine Dissociation on the Si(001) Surface

Phosphine Dissociation on the Si(001) Surface

Phosphine adsorption and dissociation on the Si(001) surface: Anab initiosurvey of structures

Use of molecular beams for kinetic measurements of chemical reactions on solid surfaces

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