Low-Temperature Deposition of Silicon Dioxide Films by Photoinduced Decomposition of Tetraethoxysilane

Abstract

A new method has been proposed for depositing silicon dioxide films on semiconductors at low temperatures by using ultraviolet (UV) lights. In this method, UV light emitted from a low-pressure Hg lamp is irradiated onto spin-on material which contains tetraethoxysilane Si(OC2H5)4. The light decomposes this compound, leading to the formation of silicon dioxide films. It is found that the physical properties of silicon dioxide films deposited on silicon are similar to those of oxide films obtained by conventional deposition methods, Evidence is presented indicating that UV light irradiation plays an important role in the formation of silicon oxides.

Low Temperature CVD of SiO2 Films Using Novel Precursors

“…2 The main CVD processes that are in practice are: atmospheric pressure CVD (APCVD), 3 low pressure CVD (LPCVD), 4 metalorganic CVD (MOCVD), 5 plasma (RF or ECR) assisted CVD (PACVD), 6'7 and laser (or photo) assisted CVD (LACVD). 8 The chemical composition and morphology of PACVD films are a sensitive function of plasma conditions, are different from those obtained from other methods, and show variable electrical, dielectric, chemical, and mechanical properties. Furthermore, the step coverage of PACVD films is not conformal.…”