Low temperature boron and phosphorous doped SiGe for recessed and raised sources and drains

Structural, electrical and optical properties of in-situ phosphorous-doped Ge layers

“…One might argue that the SiGe:P growth rate ''poisoning'' was evidenced in Refs. [20][21] at 650 1C, 20 Torr with a chlorinated chemistry (i.e., well within the low-temperature, H and/or Cl desorption from the surface limited regime), whereas we are, for Ge:P, in a high-temperature, diffusion-from-the-gaseousphase-limited regime with hydrogenated precursors. The Si:P growth rate poisoning was however evidenced in Ref.…”

“…Intrinsic and in-situ phosphorousdoped Ge growth rates are indeed almost the same at 400 1C, 100 Torr and 750 1C, 100 Torr. Such a behavior is very much at odds with the surface ''poisoning'' (and thus severe growth rate reduction) occurring for Si [19] and SiGe [20][21] when large amounts of phosphine are sent into the growth chamber. One might argue that the SiGe:P growth rate ''poisoning'' was evidenced in Refs.…”

The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains

“…In the second case, 50 nm deep in situ B doped (' 2 Â 10 20 cm À3 ) Si 0:65 Ge 0:35 recessed sources and drains were grown at 650 C, 20 Torr by reduced pressure chemical vapor deposition (RP-CVD) after HCl etching of Si recesses. 16 The third case combined the two previous cases by depositing the CESL over the recessed SiGe SD. In the fourth and fifth cases, Si 0:65 Ge 0:35 : B SD were grown again and then silicided.…”

Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs

“…Hartman et al [51] illustrated an extensively study of SEG B-and P-doped SiGe for S/D application. This study presented dopant incorporation and methods to improve the layer quality.…”