Low-stress and Long-term Stable a-SiNx:H Films Deposited by ICP-PECVD

Dergez, D.; Bittner, A.; Schalko, J.; Schmid, Ulrich

doi:10.1016/j.proeng.2014.11.392

Cited by 7 publications

(8 citation statements)

References 7 publications

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“…4 and 5, FT-IR spectra of selected samples deposited using different nitrogen flow rates [20], with and without the application of auxiliary capacitively coupled plasma are shown. In accordance with previous results [21], the relative intensity of Si N absorption band exhibits a maximum at the N 2 flow rate of 9 sccm, independent whether the deposition was assisted by a capacitively coupled plasma or not. The peak position of the Si N band is shifted to higher wavenumbers at higher N 2 flow rates in both cases.…”

Section: Microstructure and Chemical Analysessupporting

confidence: 92%

“…As the apparent Si N infrared absorption band is a convolution of several sub-bands based on the local bonding environment, a higher Si concentration will shift the convoluted Si N peak to lower wavenumbers and vice versa for an increased N concentration [22]. Recently published XPS measurements prove this dependence on the Si/N ratio [21].…”

Section: Microstructure and Chemical Analysesmentioning

confidence: 97%

“…This can be attributed to compositional changes in the a-SiN x :H thin films. Recently published X-ray photoelectron spectroscopy (XPS) measurements [20,21] indicate that the layers deposited without any additional capacitively coupled plasma excitation can be silicon-rich. This is also true when n < 2.0, despite the refractive index being lower than that of stoichiometric Si 3 N 4 .…”

Section: Optical and Mechanical Film Propertiesmentioning

confidence: 99%

See 2 more Smart Citations

Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films

Dergez

Schalko

Löffler³

et al. 2015

Sensors and Actuators A: Physical

Self Cite

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Section: Microstructure and Chemical Analysessupporting

confidence: 92%

Section: Microstructure and Chemical Analysesmentioning

confidence: 97%

Section: Optical and Mechanical Film Propertiesmentioning

confidence: 99%

See 1 more Smart Citation

Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films

Dergez

Schalko

Löffler³

et al. 2015

Sensors and Actuators A: Physical

Self Cite

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“…Existing research data show that positive fixed charge may form in dielectric/АlGaN/GaN structures synthesized using plasmochemical processes with almost any known precursors [3]. In turn the formation of the positive charge shifts the C-V curves of the structures towards negative voltages [3][4][5][6]. Experimental data have shown that the major origin of the positive charge in SiN x film structures is the large piezoelectric charge generated by changes in the elastic stresses in the AlGaN layer as a result of dielectric film deposition.…”

Section: Introductionmentioning

confidence: 99%

Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

Enisherlova¹,

Seidman²,

Temper³

et al. 2021

MoEM

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The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional heterostructure surface treatment with nitrogen plasma before dielectric deposition and HF biasing during treatment on the parameters of the С–V and I–V curves of SiNx/АlGaN/GaN structures has been analyzed. We show that films with nitrogen to silicon concentration ratios of 60 and 40% and a high oxygen content exhibit a decrease in the positive fixed charge in the structures although the I–V curves of the structures exhibit current oscillations. Information has been reported on the effect of PECVD process mode on current oscillation parameters, e.g. period and amplitude, and length of I–V curve section in which oscillations occur. Possible explanation of these oscillations has been suggested. Additional nitrogen plasma treatment of heterostructure surface before monosilane supply to the chamber changes the magnitude and sign of fixed charge and reduces the free carrier concentration in the 2D gas channel of SiNx/АlGaN/GaN heterostructures. Experimental evidence has been provided for the effect of PECVD process parameters and surface preparation on the electrical parameters of the heterostructures grown.

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“…In particular, the organic–inorganic multilayer structure of thin-film encapsulation is a promising technology [5,6,7,8,9,10]. Several types of chemical vapor deposition (CVD) techniques are applied for the deposition of silicon-based thin films including low pressure CVD [11], plasma enhanced CVD [12], and inductively coupled plasma CVD (ICPCVD) [7,13,14], which all have certain characteristics. Among these, ICPCVD technology is promising and is widely used as a high-density plasma source.…”

Section: Introductionmentioning

confidence: 99%

Deposition of Silicon-Based Stacked Layers for Flexible Encapsulation of Organic Light Emitting Diodes

Hsu

Lin

et al. 2019

Nanomaterials

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In this study, inorganic silicon oxide (SiOx)/organic silicon (SiCxHy) stacked layers were deposited by a radio frequency inductively coupled plasma chemical vapor deposition system as a gas diffusion barrier for organic light-emitting diodes (OLEDs). The effects of thicknesses of SiOx and SiCxHy layers on the water vapor transmission rate (WVTR) and residual stress were investigated to evaluate the encapsulation capability. The experimental results showed that the lowest WVTR and residual stress were obtained when the thicknesses of SiOx and SiCxHy were 300 and 30 nm, respectively. Finally, different numbers of stacked pairs of SiOx/SiCxHy were applied to OLED encapsulation. The OLED encapsulated with the six-pair SiOx/SiCxHy exhibited a low turn-on voltage and low series resistance, and device lifetime increased from 7 h to more than 2000 h.

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Low-stress and Long-term Stable a-SiNx:H Films Deposited by ICP-PECVD

Cited by 7 publications

References 7 publications

Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films

Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films

Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

Deposition of Silicon-Based Stacked Layers for Flexible Encapsulation of Organic Light Emitting Diodes

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