Impact of auxiliary capacitively coupled plasma on the properties of ICP-CVD deposited a-SiNx:H thin films

Dergez, D.; Schalko, J.; Löffler, Stefan; Bittner, A.; Schmid, Ulrich

doi:10.1016/j.sna.2015.02.013

Cited by 4 publications

(1 citation statement)

References 26 publications

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“…First, ICP power has a very important influence on the film deposition rate. [23] As can be seen from Fig. 1, when the ICP power is 25 W, 300 W, 400 W, the deposition rate of the film will increase with the increase of the RF power.…”

Section: Deposition Ratementioning

confidence: 90%

Effect of hydrogen content on dielectric strength of the silicon nitride film deposited by ICP-CVD*

Zhang¹,

Tang²,

Hu³

et al. 2021

Chinese Phys. B

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The inductively coupled plasma chemical vapor deposition (ICP-CVD) deposited silicon nitride (SiN x ) thin film was evaluated for its application as the electrical insulating film for a capacitor device. In order to achieve highest possible dielectric strength of SiN x , the process parameters of ICP-CVD were carefully tuned to control hydrogen in SiN x films by means of tuning N2/SiH4 ratio and radio frequency (RF) power. Besides electrical measurements, the hydrogen content in the films was measured by dynamic secondary ion mass spectrometry (D-SIMS). Fourier transform infrared spectroscopy (FTIR) and micro Raman spectroscopy were used to characterize the SiN x films by measuring Si–H and N–H bonds’ intensities. It was found that the more Si–H bonds lead to the higher dielectric strength.

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Section: Deposition Ratementioning

confidence: 90%