Low-strain InAs∕InGaAs∕GaAs quantum dots-in-a-well infrared photodetector

Shenoi, R. V.; Attaluri, R. S.; Siroya, A.; Shao, Jiayi; Sharma, Yashika; Stintz, A.; Vandervelde, Thomas E.; Krishna, S.

doi:10.1116/1.2835063

Cited by 51 publications

(27 citation statements)

References 21 publications

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“…[14][15][16][17][18] Ustinov et al 19 and Tatebayashi et al 20 showed how the emission wavelength of such structures may be increased by varying the In composition in the InGaAs DWELL at least up to that required for 1.31 m emission. A further advantage 17,21 of the DWELL strategy is that the QD density ͑and consequently optical efficiency͒ can be significantly increased because of the reduction in strain in the growth direction. 22,23 The integrated photoluminescence ͑PL͒ intensity in DWELL structures shows a different temperature behavior compared to conventional self-assembled QD layers: an increase at low temperatures ͑up to 80°K͒ is followed by a decrease at higher temperatures.…”

Section: Role Of Segregation In Inas/gaas Quantum Dot Structures Cappmentioning

confidence: 99%

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

et al. 2009

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Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: We report a combined experimental and theoretical analysis of Sb and In segregation during the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs strain-reducing capping layer. Cross-sectional scanning tunneling microscopy shows strong Sb and In segregation which extends through the GaAsSb and into the GaAs matrix. We compare various existing models used to describe the exchange of group III and V atoms in semiconductors and conclude that commonly used methods that only consider segregation between two adjacent monolayers are insufficient to describe the experimental observations. We show that a three-layer model originally proposed for the SiGe system ͓D. J. Godbey and M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 ͑1997͔͒ is instead capable of correctly describing the extended diffusion of both In and Sb atoms. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain-reduction layer.

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Section: Role Of Segregation In Inas/gaas Quantum Dot Structures Cappmentioning

confidence: 99%

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

et al. 2009

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“…[1][2][3][4] Additionally, the electron mobility of InAs is high due to its small electron effective mass. Bulk InAs crystals typically exhibit a cubic zinc blende (ZB) structure.…”

Section: Introductionmentioning

confidence: 99%

Thermal conductivity of indium arsenide nanowires with wurtzite and zinc blende phases

et al. 2011

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The thermal conductivity of wurtzite and zinc blende indium arsenide nanowires was measured using a microfabricated device, with the crystal structure of each sample controlled during growth and determined by transmission electron microscopy. Nanowires of both phases showed a reduction of the thermal conductivity by a factor of 2 or more compared to values reported for zinc blende indium arsenide bulk crystals within the measured temperature range. Theoretical models were developed to analyze the measurement results and determine the effect of phase on phonon transport. Branch-specific phonon dispersion data within the discretized first Brillouin zone were calculated from first principles and used in numerical models of volumetric heat capacity and thermal conductivity. The combined results of the experimental and theoretical studies suggest that wurtzite indium arsenide possesses similar volumetric heat capacity, weighted average group velocity, weighted average phonon-phonon scattering mean free path, and anharmonic scattering-limited thermal conductivity as the zinc blende phase. Hence, we attribute the differing thermal conductivity values observed in the indium arsenide nanowires of different phases to differences in the surface scattering mean free paths between the nanowire samples.

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“…The size (diameter) dependent thermal relaxation time and ultrasonic attenuation coefficients over frequency square under the condition 1 ωτ  are evaluated using Equation (7) and Equations (5), (9), and (10) respectively. They are also listed in Table 3.…”

Section: Resultsmentioning

confidence: 99%

Diameter Dependent Ultrasonic Characterization of InAs Semiconductor Nanowires

Gupta¹,

Dhawan²,

Verma³

et al. 2015

OJA

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In this paper, we report the diameter dependent ultrasonic characterization of wurtzite structured InAs semiconductor nanowires at the room temperature. In this work, we have calculated the non-linear higher order elastic constants of InAs nanowires validating the interaction potential model. The ultrasonic attenuation and velocity in the nanowires are determined using the elastic constants for different diameters of the nanowires. Where possible, the results are compared with the experiments. Finally, we have established the correlation between the size dependent thermal conductivity and the ultrasonic attenuation of the nanowires.

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Low-strain InAs∕InGaAs∕GaAs quantum dots-in-a-well infrared photodetector

Cited by 51 publications

References 21 publications

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

Thermal conductivity of indium arsenide nanowires with wurtzite and zinc blende phases

Diameter Dependent Ultrasonic Characterization of InAs Semiconductor Nanowires

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