Low resistance polycrystalline silicon by boron or arsenic implantation and thermal crystallization of amorphously deposited films

Becker, Frank; Oppolzer, H.; Weitzel, I.; Eichermüller, H.; Schaber, H.

doi:10.1063/1.334057

Cited by 48 publications

(10 citation statements)

References 17 publications

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“…Poly-Si was formed by low pressure chemical vapor deposition (LPCVD) at deposition temperatures of TD = 625 ~ or TD --560~ In the latter case, an initially amorphous film is obtained (4) which after crystallization shows a significantly larger grain size than films after crystalline deposition (TD = 625~ (5). The poly-Si deposition was performed in a commercially available reactor.…”

Section: Methodsmentioning

confidence: 99%

Analysis of Polysilicon Diffusion Sources

Probst

Böhm

Schaber

et al. 1988

J. Electrochem. Soc.

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Diffusion of boron and arsenic from implantation doped polycrystalline silicon films into single-crystal silicon was investigated as a function of various process parameters. The effects of interface treatment prior to poly-Si deposition and of the poly-Si grain size are analyzed. New data on dopant segregation are presented. Limitations of present process modeling tools are discussed and improved values for several input parameters are proposed.

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Section: Methodsmentioning

confidence: 99%

Analysis of Polysilicon Diffusion Sources

Probst

Böhm

Schaber

et al. 1988

J. Electrochem. Soc.

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“…Amorphous Si films deposited by CVD also have Si nanocrystals embedded in the amorphous matrix that act as seeds for crystallization, [25][26][27][28] and low-dose ion irradiation of such films is often used to amorphize the nanocrystal seeds and therefore gain control over the nucleation rate of the crystal grains. At this point, it is not yet clear whether ion irradiation will have a significant FIG.…”

Section: Discussionmentioning

confidence: 99%

Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation

Kim

Whang

Sun

et al. 2002

Journal of Applied Physics

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The effect of ion irradiation on the formation of luminescent Si nanocrystals from silicon-rich silicon oxide ͑SRSO͒ films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition ͑PECVD͒ whose Si content ranged from 33 to 50 at. % is investigated. As-deposited SRSO films contained a high density of irregular-shaped Si nanocrystals. Irradiating these films with 380 keV Si at room temperature to a dose of 5.7ϫ10 15 cm Ϫ2 prior to anneal at 1000°C is found to increase the luminescence intensity due to Si nanocrystals over the films. Based on the x-ray photoemission spectra and the dependence of the luminescence intensity on the irradiating ion dose, anneal time, and the silicon content of the film, we propose the destruction of pre-existing Si clusters by ion irradiation to be an important factor responsible for the observed enhancement of luminescence, and suggest that preanneal irradiation may be a viable method to control the formation of luminescent Si nanocrystals in PECVD-deposited silicon-rich silicon oxide.

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“…These used Rutherford backscattering spectrometry (RBS) (1,2,5,6) or transmission electron microscopy (TEM) (7,8) techniques.…”

Section: A Study Of Postannealing and In Situ Annealing Of Silicon Wamentioning

confidence: 99%

“…Evidence of charge trapping during tunneling and detrapping during thermal annealing has been reported (7,16). The smaller than theoretically expected slope of the experimental I-V curve is indicative of electron trapping.…”

mentioning

confidence: 91%

Charge Trapping in Oxide Grown on Polycrystalline Silicon Layers

Avni

Abramson

Sonnenblick

et al. 1988

J. Electrochem. Soc.

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Shifts in tunneling I-V characteristics are used to study electron trapping in oxides thermally grown on silicon layers deposited in both amorphous and polycrystalline phases. The electron trapping resulted from charge injection by tunneling from either the bottom or top electrodes of capacitors constructed of two deposited silicon layers separated by thermal oxide. It is observed that upon injection from the top electrode, the resulting trapped-charge centroid is located close to the middle of the oxide layer. On the other hand, injection from the bottom electrode results in an apparent trappedcharge centroid which is located near the bottom silicon-oxide interface. This difference may be attributed to the existence of asperities on the bottom silicon layer.

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Low resistance polycrystalline silicon by boron or arsenic implantation and thermal crystallization of amorphously deposited films

Abstract: Articles you may be interested inA comparison of the thermal redistribution of arsenic, ion implanted into titanium disilicide films formed on single and polycrystalline silicon

Cited by 48 publications

References 17 publications

Analysis of Polysilicon Diffusion Sources

Analysis of Polysilicon Diffusion Sources

Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation

Charge Trapping in Oxide Grown on Polycrystalline Silicon Layers

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