Charge Trapping in Oxide Grown on Polycrystalline Silicon Layers

Avni, E.; Abramson, O.; Sonnenblick, Y.; Shappir, J.

doi:10.1149/1.2095549

Cited by 10 publications

(4 citation statements)

References 23 publications

(63 reference statements)

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“…A previous work has mentioned the centroids of trapped charge (X t ) in the polyoxides. 17 By the bidirectional I-V measurement and by the shifts of Fowler-Nordheim ͑F-N͒ I-V characteristics before and after stress for both polarities, the centroids of the trapped charges are calculated from the following relationship…”

Section: Resultsmentioning

confidence: 99%

Performance Evaluation of Cleaning Solutions Enhanced with Tetraalkylammonium Hydroxide Substituents for Post-CMP Cleaning on Poly-Si Film

Pan

Lei

et al. 2002

J. Electrochem. Soc.

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The cleaning solutions augmented with tetraalkylammonium hydroxides ͑TAAHs͒ with various chain-lengths of hydrocarbon substituents were developed for post-poly-Si chemical mechanical polishing ͑CMP͒ cleaning. The cleaning performance with respect to particle, organic, and metal removal as well as surface roughness was evaluated for a series of 3% NH 4 OH solutions dosed with 0.26 M of a TAAH and 100 ppm of ethylenediaminetetraacetic acid ͑EDTA͒. The experimental results demonstrated that the cleaning solutions enhanced with these surfactants ͑TAAH͒ and a chelating agent ͑EDTA͒ achieved significantly better removal efficiencies of particle and metal impurities than the control solution containing 3% NH 4 OH only. A conceptual model involving surface adsorption and double-layer formation was used to postulate the aqueous-phase surface interactions between the tetraalkylammonium cations and the poly-Si surface, and to explain the removal mechanisms of particle and metal impurities from the surface. The improved electrical properties ͑current density-electric field and charge-to-breakdown characteristics͒ of the post-CMP capacitor after cleaning further demonstrated the reliability and feasibility of the proposed cleaning recipes.The increasing complexity and miniaturization of modern integrated circuits demand a high device yield, meaning that lower defect density in the active region of silicon devices is a necessity. 1,2 For instance, the reliability of nonvolatile memory devices such as EEPROM, EPROM ͑electrically erasable and erasable programmable read-only memory, respectively͒, and flash memory is strongly dependent on the polyoxide quality characterized by low leakage current and high breakdown electrical field to prolong their data retention capabilities. Inadequate control over the thickness uniformity and surface roughness of the poly-Si layer directly leads to defect formation on the poly-Si/polyoxide interface, thus severely degrading the electrical properties. In recent years, the chemical mechanical polishing ͑CMP͒ process has been widely accepted as the mainstream planarization technique in the fabrication of deep submicrometer integrated circuits 3 in light of its capability to reduce surface roughness. However, as the device's dimension continues to scale down, the requirement for post-CMP cleaning becomes increasingly more stringent to ensure high device yield.The brush-scrubbing technique in combination with dilute ammonium hydroxide solution has been employed for many years and was considered among the most effective methods for removing particles after the CMP process. 4 Numerous studies focusing on improving oxide layer CMP as well as the post-CMP cleaning efficiency have been reported. 5-9 Jolley 7 reported that the solution containing tetramethylammonium hydroxide ͑TMAH͒ showed enhancement of metal removal, and had little effect on the surface roughness for post tungsten-CMP cleaning as compared to ammonium hydroxide solution. Cady and Varadarajan 8 also proposed that the alkaline solution co...

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Section: Resultsmentioning

confidence: 99%

Performance Evaluation of Cleaning Solutions Enhanced with Tetraalkylammonium Hydroxide Substituents for Post-CMP Cleaning on Poly-Si Film

Pan

Lei

et al. 2002

J. Electrochem. Soc.

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“…The trapped charge density (Q t ) in the Al 2 O 3 IPDs can be estimated according to the bi-directional I-V method. 14)…”

Section: Effects Of Pda Temperaturementioning

confidence: 99%

“…Gate voltage shifts were extracted from the linear portion of the J-V curves at a current level 100 times smaller (1 mA/cm 2 ) than that of the injection current (100 mA/cm 2 ) in order to reduce possible re-emission of the trapped electrons. 14) The trapped charge densities of Al 2 O 3 inter-poly capacitors, at various PDA temperatures under positive and negative CCS, are shown in Fig. 10.…”

Section: Effects Of Pda Temperaturementioning

confidence: 99%

Characteristics of the Inter-Poly Al₂O₃ Dielectrics on NH₃-Nitrided Bottom Poly-Si for Next-Generation Flash Memories

Chen

Chien

Lou

2005

Jpn. J. Appl. Phys.

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We consider the polarization of unstable type-IIB D0-branes in the presence of a background five-form field strength. This phenomenon is studied from the point of view of the leading terms in the non-abelian Born Infeld action of the unstable D0-branes. The equations have SO(4) invariant solutions describing a non-commutative 3-sphere, which becomes a classical 3-sphere in the large-N limit. We discuss the interpretation of these solutions as spherical D3-branes. The tachyon plays a tantalizingly geometrical role in relating the fuzzy S 3 geometry to that of a fuzzy S 4 .

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“…This high local electric field causes the polyoxide to exhibit a high leakage current and lower dielectric breakdown field in comparison with the silicon dioxide grown from a single crystalline silicon substrate. [4][5][6][7][8] It is well known that the integrity of polysilicon oxide depends strongly on the oxidants used for growth or postoxidation annealing. [9][10][11][12][13][14][15] Polyoxide has been demonstrated to have an improved electric property when it is grown in N 2 O ambient.…”

mentioning

confidence: 99%

Characteristics of TEOS Polysilicon Oxides: Improvement by CMP and High Temperature RTA N[sub 2]/N[sub 2]O Annealing

Chen

Lei

Chen

et al. 2000

J. Electrochem. Soc.

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The integrity of tetraethylorthosilicate (TEOS) polyoxide using chemical mechanical polishing (CMP) plus a high temperature rapid thermal annealing (RTA) step was studied in this work. The surface morphology of polysilicon is improved after a CMP process. Polyoxides deposited by low pressure chemical vapor deposition (LPCVD) TEOS in conjunction with CMP and RTA N 2 /N 2 O annealing exhibit a better current-electric field (J-E) curve, higher charge to breakdown ratio, and lower electron trapping rate. In addition, the composite bilayer (TEOS deposited and thermally grown by RTA) polyoxide film introduces an asymmetry of electrical leakage current, trapping characterization, and charge to breakdown, with respect to the injection of different polarity (ϩV g and ϪV g ).

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Charge Trapping in Oxide Grown on Polycrystalline Silicon Layers

Cited by 10 publications

References 23 publications

Performance Evaluation of Cleaning Solutions Enhanced with Tetraalkylammonium Hydroxide Substituents for Post-CMP Cleaning on Poly-Si Film

Performance Evaluation of Cleaning Solutions Enhanced with Tetraalkylammonium Hydroxide Substituents for Post-CMP Cleaning on Poly-Si Film

Characteristics of the Inter-Poly Al₂O₃ Dielectrics on NH₃-Nitrided Bottom Poly-Si for Next-Generation Flash Memories

Characteristics of TEOS Polysilicon Oxides: Improvement by CMP and High Temperature RTA N[sub 2]/N[sub 2]O Annealing

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Charge Trapping in Oxide Grown on Polycrystalline Silicon Layers

Cited by 10 publications

References 23 publications

Performance Evaluation of Cleaning Solutions Enhanced with Tetraalkylammonium Hydroxide Substituents for Post-CMP Cleaning on Poly-Si Film

Performance Evaluation of Cleaning Solutions Enhanced with Tetraalkylammonium Hydroxide Substituents for Post-CMP Cleaning on Poly-Si Film

Characteristics of the Inter-Poly Al2O3 Dielectrics on NH3-Nitrided Bottom Poly-Si for Next-Generation Flash Memories

Characteristics of TEOS Polysilicon Oxides: Improvement by CMP and High Temperature RTA N[sub 2]/N[sub 2]O Annealing

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Characteristics of the Inter-Poly Al₂O₃ Dielectrics on NH₃-Nitrided Bottom Poly-Si for Next-Generation Flash Memories