Low-resistance ohmic contacts to <i>p</i>-type GaN achieved by the oxidation of Ni/Au films

Ho, Jau Der; Jong, C.-S.; Chiu, Chien Chao; Huang, Chien-Kang; Shih, Kwang-Kuo; Chen, Li-Chien; Chen, Fu‐Rong; Kai, Ji‐Jung

doi:10.1063/1.371392

Cited by 264 publications

(107 citation statements)

References 60 publications

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“…Nevertheless, from among all contact structures on p-GaN the Au/Ni/p-GaN [8][9][10][11][12][13][14][15][16][17] structure seems to be the most suitable thanks to relatively good values of the specific contact resistance and in the case of very thin layers also thanks to optical transparency.…”

Section: Introductionmentioning

confidence: 99%

Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes

Liday¹,

Vogrinčič²,

Vretenár³

et al. 2013

Journal of Electrical Engineering

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We have designed and verified a new structure for ohmic contacts to p-GaN, mainly for applications in light emitting devices based on a layer of single-walled carbon nanotubes (SWCNT) and metallic layers of Cr and Au, namely in configuration Au/Cr/SWCNT/p-GaN. The layer of carbon nanotubes was deposited on p-GaN by spraying a solution of synthesized SWCNTs, while the layers of Cr and Au were vapour deposited. The effects of the annealing temperature and time upon the electrical properties of Au/Cr/SWCNT/p-GaN contacts have been studied. It has been found that the contact structure provides a low resistivity ohmic contact after subsequent annealing in N2 ambient at 700 °C for 1 minute.

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Section: Introductionmentioning

confidence: 99%

Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes

Liday¹,

Vogrinčič²,

Vretenár³

et al. 2013

Journal of Electrical Engineering

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“…In addition to cracking and delamination of the metal film, this void formation can negatively affect device performance from an increase in resistance caused by a reduction of the contact area. Ni/Au contacts oxidized in N 2 /O 2 atmospheres are the predominant contact scheme applied to p-GaN [3][4][5][6][7] . During heat treatment in a N 2 /O 2 , the Ni diffuses to the surface to form NiO and the Au diffuses down to the substrate surface.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Herrero

Blanchard

Bertness

2013

JoVE

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Single GaN nanowire (NW) devices fabricated on SiO 2 can exhibit a strong degradation after annealing due to the occurrence of void formation at the contact/SiO 2 interface. This void formation can cause cracking and delamination of the metal film, which can increase the resistance or lead to a complete failure of the NW device. In order to address issues associated with void formation, a technique was developed that removes Ni/Au contact metal films from the substrates to allow for the examination and characterization of the contact/substrate and contact/ NW interfaces of single GaN NW devices. This procedure determines the degree of adhesion of the contact films to the substrate and NWs and allows for the characterization of the morphology and composition of the contact interface with the substrate and nanowires. This technique is also useful for assessing the amount of residual contamination that remains from the NW suspension and from photolithographic processes on the NW-SiO 2 surface prior to metal deposition. The detailed steps of this procedure are presented for the removal of annealed Ni/Au contacts to Mg-doped GaN NWs on a SiO 2 substrate. Video LinkThe video component of this article can be found at

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“…However, the best contact structure to p-GaN seems to be the Au/Ni structure, namely because of the relatively good values of contact resistance and in the case of very thin layers also thanks to its optical transparency. It was found that annealing of such a thin Ni/Au bilayer in air brings about a change of Ni into NiO, diffusion of Au into the interface and at the same time an improvement in the transparency of the metallization layer [2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers

Liday¹,

Vogrinčič²,

Vretenár³

et al. 2013

Journal of Electrical Engineering

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, thus with and without an interlaying layer of single-walled carbon nanotubes (SWCNT). The metallization layers were deposited on p-GaN by DC reactive magnetron sputtering in an atmosphere with and without a low concentration of oxygen (cca 0.2 at%). The contacts were annealed in N 2 . We have found that the structure containing the SWCNT interlayer exhibits lower values of contact resistivity in comparison with an otherwise identical contact without the SWCNT interlayer.K e y

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Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films

Cited by 264 publications

References 60 publications

Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes

Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers

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