Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes

Abstract

We have designed and verified a new structure for ohmic contacts to p-GaN, mainly for applications in light emitting devices based on a layer of single-walled carbon nanotubes (SWCNT) and metallic layers of Cr and Au, namely in configuration Au/Cr/SWCNT/p-GaN. The layer of carbon nanotubes was deposited on p-GaN by spraying a solution of synthesized SWCNTs, while the layers of Cr and Au were vapour deposited. The effects of the annealing temperature and time upon the electrical properties of Au/Cr/SWCNT/p-GaN contacts have been studied. It has been found that the contact structure provides a low resistivity ohmic contact after subsequent annealing in N2 ambient at 700 °C for 1 minute.

Hybrid electrode based on carbon nanotube and graphene for ultraviolet light-emitting diodes

“…Recently, Liday et al have reported that a combination of SWCNTs and reduced graphene oxide (rGO) as an interlayer allows the metallization to form an ohmic contact on a p-GaN layer. 22) Considering the relatively low transmittance and high sheet resistance of rGO compared with those of CVD graphene, the application of such combinations as a transparent electrode requires more breakthroughs. 23) Different from the above study, which considers the p-type semiconducting property of the SWCNTs in forming an ohmic contact, here, we report on the integration of CVD graphene with SWCNTs in an attempt to produce a reliable hybrid electrode with tunable properties.…”

Application Of Carbon Nanotubes And Reduced Graphene Oxide Layers For Ohmic Contacts To p–GaN

“…Due to their one dimensional structure CNTs exhibit field emission properties. The first applications of CNTs for ohmic contacts to p-GaN showed that the contact resistivity was lower than in the case of an Au/Ni contact [1,2].…”