Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers

Abstract

, thus with and without an interlaying layer of single-walled carbon nanotubes (SWCNT). The metallization layers were deposited on p-GaN by DC reactive magnetron sputtering in an atmosphere with and without a low concentration of oxygen (cca 0.2 at%). The contacts were annealed in N 2 . We have found that the structure containing the SWCNT interlayer exhibits lower values of contact resistivity in comparison with an otherwise identical contact without the SWCNT interlayer.K e y