Low resistance intracavity-contacted oxide-aperture VCSELs

MacDougal, M.H.; Geske, J.; Lin, Chenxi; Bond, A.E.; Dapkus, P. D.

doi:10.1109/68.651082

Cited by 50 publications

(10 citation statements)

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confidence: 99%

“…The presented scheme can be further integrated to yield electrically pumped plasmon enhanced TPE by employing lateral injection techniques, similar to those used in oxide aperture vertical-cavity surface-emitting lasers. 21 TPE spectrum from a semiconductor is calculated by a second-order term in the time-dependent perturbation theory 13 where pω 0 is the energy of the one-photon transition, D(ω) the density of radiation modes, and the summation over carrier states takes into account the electron density of states and the Fermi-Dirac distributions. M, the matrix element for the transition, is given by where e is the electron charge, m 0 the free electron mass, V the field quantization volume, and M′ the dimensionless matrix element for the second-order process where p is the momentum operator, ε b the photon field, Γ the charge-carrier dephasing rate, 12 and E m the energy of the electron state m, with m being one of i, n, and f, standing for initial, intermediate, and final states, respectively.…”

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confidence: 99%

“…The near-infrared (NIR) broad emission (Figure a) was verified to be TPE by singly stimulated emission experiments (Figure b). The presented scheme can be further integrated to yield electrically pumped plasmon enhanced TPE by employing lateral injection techniques, similar to those used in oxide aperture vertical-cavity surface-emitting lasers …”

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Plasmonic Nanoantennas for Broad-Band Enhancement of Two-Photon Emission from Semiconductors

et al. 2010

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We demonstrate experimentally and theoretically a broad-band enhancement of the spontaneous two-photon emission from AlGaAs at room temperature by plasmonic nanoantenna arrays fabricated on the semiconductor surface. Plasmonic structures with inherently low quality factors but very small effective volumes are shown to be optimal. A 20-fold enhancement was achieved for the entire antenna array, corresponding to an enhancement of nearly 3 orders of magnitude for charge carriers emitting at the near field of a plasmonic antenna.KEYWORDS Semiconductors, two-photon emission, nanoparticles, plasmonic enhancement O ver the past decade, a growing interest has been focused on exploiting the tight confinement of the electromagnetic field achievable in the vicinity of a metal-dielectric boundary, commonly referred to as surface plasmon polariton (SPP), for enhancing the efficiency of spontaneous emission in semiconductors, 1-3 and it has been shown that such enhancement is highly significant for very inefficient emitters. 4 These endeavors follow the success of using SPPs for the enhancement of nonlinear phenomena, including the surface enhancement of Raman scattering by many orders of magnitude, 5 surface-enhanced second-harmonic generation, 6 and the recent demonstration of high-harmonic generation by coupling to bow-tie nanoantennas. 7 It was also shown that SPPs preserve many key quantum properties of the photons used to excite them, including entanglement, 8,9 and the quantization theory of surface plasmon fields was developed 10 and experimentally demonstrated, 11 allowing an array of new applications in quantum information processing. Two-photon emission (TPE) is a nonlinear process with unique quantum properties, important in different realms of science. TPE from a semiconductor results from electronhole recombination with the simultaneous emission of two photons. Semiconductor TPE was recently observed 12 and theoretically analyzed, 13 and current-induced two-photon transparency was demonstrated, 14 paving the way for the realization of room-temperature miniature devices, including semiconductor two-photon lasers 15 and photon pair sources. 16 However, TPE is an inherently weak second-order process, and therefore enhancing mechanisms could significantly widen the range of its applications. Since the emission spectrum of spontaneous TPE is very wide band due to the large energy uncertainty of the virtual state, regular dielectric optical cavities with a very high qualityfactor, Q, and thus very narrow bandwidth 17 may enhance emission at specific wavelengths; 18 however, they are unable to enhance the broad spectrum of TPE. Plasmonic cavities, on the other hand, enhancing the field by significantly reducing the mode volume at low Q, 19 are optimal.Here we report the first experimental observation of plasmon-enhanced spontaneous TPE from semiconductors, by coupling the emission to bow-tie nanoantenna arrays, having efficient radiative coupling of plasmons to far-field light. 20 The broad band TPE from AlGaA...

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Plasmonic Nanoantennas for Broad-Band Enhancement of Two-Photon Emission from Semiconductors

et al. 2010

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“…However, the oxide confinement method increases the differential resistance of the device, which needs the same current injection carriers under the higher bias, which also induces the impendence mismatch to degrade the data transmission 25 . Therefore, the high-doping zincdiffusion technology was used to improve the resistance of p-type layer for VCSELs, which further decreases the free-carrier absorption to enhance the quantum efficiency of the VCSEL 26,27 29 .…”

Section: Vcselmentioning

confidence: 99%

850/940-nm VCSEL for optical communication and 3D sensing

Cheng¹,

Shen²,

Kao³

et al. 2018

Opto-Electronic Advances

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This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.

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“…By reducing the diameter of oxide-confined aperture, the allowable area of mode field and characteristic frequency of the VCSEL are confined to avoid the generation of high-order transverse modes, which strategically decreases the lasing mode number for delivering the FM VCSEL at some sacrifice of output power [10]. Unfortunately, as the oxide-confined aperture becomes smaller, the differential resistance of the VCSEL would inevitably increase to degrade the modulation depth under data modulating [11]. To solve this problem, a high-doping zinc-diffusion fabrication was considered to be added to the top distributed Bragg reflector (DBR) to improve the ohmic contact by reducing the mirror resistance through the suppression of free carrier absorption [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Few-mode VCSEL chip for 100-Gb/s transmission over 100 m multimode fiber

et al. 2017

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A few-mode (FM) vertical cavity surface emitting laser (VCSEL) chip with heavily zinc-diffused contact layer and oxide-confined cross-section is demonstrated for carrying pre-leveled 16-quadrature amplitude modulation orthogonal frequency division multiplexing (QAM-OFDM) data in OM4 multi-mode fiber (MMF) over 100 m for intra-data-center applications. The FM VCSEL chip, which has an oxide-confined emission aperture of 5 μm, demonstrates high external quantum efficiency, provides an optical power of 2.2 mW at 38 times threshold condition, and exhibits 3 dB direct-modulation bandwidth beyond 22 GHz at a cost of slight heat accumulation. At a DC bias point of 5 mA (22.6I th) the FM VCSEL chip, with sufficiently normalized modulation output, supports Baud and data rates of 25 and 100 Gb/s, respectively, with forward error correction (FEC) certifying receiving quality after back-to-back transmission. After passing through 100 m OM4 MMF with a receiving power penalty of 4 dB, the FM VCSEL chip demonstrates FEC-certified transmission of the pre-leveled 16-QAM OFDM data at 92 Gb/s.

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Low resistance intracavity-contacted oxide-aperture VCSELs

Cited by 50 publications

References 10 publications

Plasmonic Nanoantennas for Broad-Band Enhancement of Two-Photon Emission from Semiconductors

Plasmonic Nanoantennas for Broad-Band Enhancement of Two-Photon Emission from Semiconductors

850/940-nm VCSEL for optical communication and 3D sensing

Few-mode VCSEL chip for 100-Gb/s transmission over 100 m multimode fiber

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