Low-power, high-gain and low-noise CMOS distributed amplifier for UWB systems

Chang, Jin-Fa; Lin, Yun-Wen

doi:10.1049/el.2009.0354

Cited by 13 publications

(6 citation statements)

References 4 publications

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“…During the 1970s-1990s, engineers usually tried to fabricate integrated wideband amplifiers by utilising the BJT, MESFET, BiFET, HEMT, MOS, CMOS and BiCMOS technologies. In the 2000s, they chiefly focussed on the CMOS, BiCMOS and HEMT processes to design integrated wideband and ultrawideband LNAs, and also, they proposed different solutions such as shunt feedback technique to control gain, bandwidth and noise, common gate topology to realise wideband input [86,88,132,134,142,149,171,174,176,202,206,207,211,214,217,244,250,251,256,262,264,268,277,285,290,298,302,303,308,310,311,321,327,341,349,360] Gain � BW/P dc � (NF − 1) Or 20log 10 134,141,206,213,217,218,231,251,277,290,…”

Section: Discussionmentioning

confidence: 99%

“…Most of the achievements in the 2000s were based on the CMOS [49, 50, 56, 57, 63–67, 69, 70, 72–74, 77, 82–84, 86, 87, 90–93, 95, 96, 98, 100, 101, 103–105, 107–117, 119–124, 127–131, 133–138, 140–142, 144, 145, 147–151], BiCMOS [47, 55, 59, 60, 62, 78–81, 85, 118, 143], and HEMT [53, 71, 88, 89, 97, 106, 152] integrated circuits. Since the 1980s, usually but not always, HEMT has been employed for the frequencies higher than 10 GHz [21, 24, 27, 32, 36, 37, 39, 71, 89…”

Section: Uwb Lnamentioning

confidence: 99%

“…In the 2000s, number of investigations on the RF Wideband Amplifier was several times more than the previous decades [46–100, 101–152]. Furthermore, it became widespread to use the phrase ‘wideband LNA’ for transistorised RF wideband low‐noise amplifiers [50, 52, 53, 55–64, 66–68, 71–93, …”

Section: Uwb Lnamentioning

confidence: 99%

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Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Discussionmentioning

confidence: 99%

Section: Uwb Lnamentioning

confidence: 99%

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Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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“…Achieving high efficiency UWB LNA means to satisfy a hard trade-off related to the LNA characteristics over the wide band of UWB spectrum, namely, in/out impedance matching, high and flat gain, low dissipated power, low noise figure (NF), and finally compact chip size. Various LNA topologies have been proposed to address such issues [4][5][6][7][8][9][10][11][12][13][14][15]. Among them the distributed amplifier configuration has been largely investigated [4][5][6], based on cascading multistage it enables to widen the bandwidth and increase the gain.…”

Section: Introductionmentioning

confidence: 99%

Efficient UWB low noise amplifier with high out of band interference cancellation

Taibi

Trabelsi

Slimane³

et al. 2017

IET Microwaves, Antennas & Propagation

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This work provides a new co‐design methodology of ultrawide band (UWB) low‐noise amplifier (LNA) with high out of band interference cancellation. The solution consists to cascade a selective microstrip UWB bandpass filter (BPF) with the proposed 0.18 µm complementary metal–oxide–semiconductor‐based LNA. Indeed, the usefulness of this co‐design technique is to address the interference mitigation through the BPF and amplification function by using the LNA. The proposed solution remains powerful since the out of band interferences are well avoided with an efficient amplification performance while well fulfilling UWB requirements, i.e. good matching over a wide bandwidth from 3.2 to 10.64 GHz, 17 dB of power gain (S21), the noise figure varies between 2.5 and 5.7 dB, and the dissipated power (PDC) is typically 16.5 mW. It is relevant to point out that the computed figure‐of‐merit of the proposed circuit is 29.03 which is very competitive compared with state‐of‐the art.

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“…UWB LNA had to provide an accurate input and output match, low noise, good linearity, and sufficient gain across the entire UWB spectrum. In recent years, CMOS distributed amplifiers (DAs) have become increasingly popular for UWB systems thanks to the nature of their wide bandwidth [1][2][3][4][5][6][7]. A distributed amplifier (DA) with high power gain (S 21 ) of 16±1.5 dB is described in [2].…”

Section: Introductionmentioning

confidence: 99%

3–10GHz CMOS distributed amplifier low-power and low-noise and high-gain low noise amplifier for UWB systems

Chen

Yang

2010

TENCON 2010 - 2010 IEEE Region 10 Conference

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This study presents a 3-10GHz ultra-wideband lownoise amplifier (UWB LNA) with CMOS distributed amplification,(DA) featuring low power consumption, flat response, high gain (S 21 ), and low noise figure (NF). The DA UWB LNA is designed with standard 0.18μm CMOS technology. Low power consumption, flat and high gain (S 21 ) were achieved through the use of a proposed two stage DA, and current-reused technique with a peaking inductor. An RL terminating network for the gate transmission line, and an under-damped Q-factor for second-order NF frequency response achieved a flat response and, low noise figure (NF). The LNA achieved S 21 of 19.8±1.2 dB and an average NF of 3.4±0.36 dB with power dissipation (PD) of only 14.8 mW. Keywords-low noise amplifier (LNA); ultra-wideband (UWB); distributed amplifier (DA)I.

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Low-power, high-gain and low-noise CMOS distributed amplifier for UWB systems

Cited by 13 publications

References 4 publications

Ultrawideband LNA 1960–2019: Review

Ultrawideband LNA 1960–2019: Review

Efficient UWB low noise amplifier with high out of band interference cancellation

3–10GHz CMOS distributed amplifier low-power and low-noise and high-gain low noise amplifier for UWB systems

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Low-power, high-gain and low-noise CMOS distributed amplifier for UWB systems

Cited by 13 publications

References 4 publications

Ultrawideband LNA 1960–2019: Review

Ultrawideband LNA 1960–2019: Review

Efficient UWB low noise amplifier with high out of band interference cancellation

3&#x2013;10GHz CMOS distributed amplifier low-power and low-noise and high-gain low noise amplifier for UWB systems

Contact Info

Product

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3–10GHz CMOS distributed amplifier low-power and low-noise and high-gain low noise amplifier for UWB systems