2011 IEEE/ACM International Symposium on Nanoscale Architectures 2011
DOI: 10.1109/nanoarch.2011.5941494
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Low-power functionality enhanced computation architecture using spin-based devices

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Cited by 64 publications
(49 citation statements)
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“…As a consequence, spins in the opposite direction of the magnet will accumulate in the channel. Meanwhile, only the spins in the same direction as M1 will pass out of M1, while the spins in the opposite direction will move through the channel to switch the direction of M2, so the device will work as an inverter [67]. Based on this phenomena, one leverages the Current-In-Plane non-local spin valve modular model in [68] to simulate the all-spin logic.…”
Section: All-spin Logicmentioning
confidence: 99%
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“…As a consequence, spins in the opposite direction of the magnet will accumulate in the channel. Meanwhile, only the spins in the same direction as M1 will pass out of M1, while the spins in the opposite direction will move through the channel to switch the direction of M2, so the device will work as an inverter [67]. Based on this phenomena, one leverages the Current-In-Plane non-local spin valve modular model in [68] to simulate the all-spin logic.…”
Section: All-spin Logicmentioning
confidence: 99%
“…Electronics 2017, 6, 67 18 of 54 that of CMOS-based ADC. CMOS-based ADC also stops to work when VDD ≤ 0.3 V due to large onresistance for CMOS transistor.…”
Section: Low-power Low Voltage Sar Adc Using Emerging Tfet Technologymentioning
confidence: 99%
“…Majority logic gates using all-spin logic is proposed in [10]. There, layout of M 3 gate using all-spin logic is shown and it is noted that majority gates with larger number of inputs can also be implemented.…”
Section: Emerging Technologiesmentioning
confidence: 99%
“…It has been shown that spin- Fig. 3: Comparison of switching current density (JMTJ) as a function of switching time by proposed model, NEGF [3] and experimental data [14]. torque is a more scalable approach and hence will lead to lower power memory switching for identical stability [2].…”
Section: A Stt-mrammentioning
confidence: 99%
“…Recent advances in spintronics, especially experiments showing the switching of nano-magnets with spin polarized current, has led to the possibility of very high density on-chip magnetic storage with zero leakage power, and logic styles that can potentially have very low intrinsic power consumption [1]- [3]. Most of the nano-magnetic devices use magnetic tunnel junctions (MTJs) or spin-valves [5] to efficiently write/read the magnets.…”
Section: Introductionmentioning
confidence: 99%