A framework for simulating hybrid MTJ/CMOS circuits: Atoms to system approach

Panagopoulos,; Augustine,; Roy, Sanghamitra

doi:10.1109/date.2012.6176592

Cited by 26 publications

(10 citation statements)

References 16 publications

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“…V. SIMULATION FRAMEWORK A mixed-mode simulation framework was developed for the evaluation of the proposed technique. The SPICE based MTJ model [6] consists of a voltage dependent resistance and a Landau-Lifshitz-Gilbert (LLG) solver [6] for capturing the magnetization dynamics. Non-equilibrium Green's function (NEGF) approach was used to obtain the voltage dependent resistance of the MTJ in P and AP states [7].…”

Section: Resultsmentioning

confidence: 99%

Write-Optimized STT-MRAM Bit-Cells Using Asymmetrically Doped Transistors

Choday

Gupta

Roy

2014

IEEE Electron Device Lett.

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Spin-transfer torque MRAM (STT-MRAM) is a potential candidate for replacing SRAMs in last level on-chip caches. However, it comes with high write power and oxide reliability issues due to large current required to achieve high speed switching. In this letter, we propose a technique to mitigate the conflict between write-ability and write power of STT MRAM using an access transistor with asymmetric doping at the source/drain terminals. Our technique achieves 35% write power reduction at iso-write speed. In addition, the maximum voltage drop across the tunnel barrier in the Magnetic Tunnel Junction reduces by 23% which improves its reliability.Index Terms-STT-MRAM, write power, asymmetric FinFET.

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Section: Resultsmentioning

confidence: 99%

Write-Optimized STT-MRAM Bit-Cells Using Asymmetrically Doped Transistors

Choday

Gupta

Roy

2014

IEEE Electron Device Lett.

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“…3) provides sharp magnetization reversal with a TMR of 64%. We perform NEGF based transport simulation [10] of the MTJ to investigate the effects of using this MTJ with CMOS circuits [11] and the overall simulation framework [12] is shown in Fig. 4.…”

Section: Circuit Analysis and Discussionmentioning

confidence: 99%

Laser Induced Magnetization Reversal for Detection in Optical Interconnects

Azim

Fong

Ostler

et al. 2014

IEEE Electron Device Lett.

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Optical interconnect has emerged as the frontrunner to replace electrical interconnect especially for off-chip communication. However, a major drawback with optical interconnects is the need for photodetectors and amplifiers at the receiver, implemented usually by direct bandgap semiconductors and analog CMOS circuits, leading to large energy consumption and slow operating time. In this letter, we propose a new optical interconnect architecture that uses a magnetic tunnel junction (MTJ) at the receiver side that is switched by femtosecond laser pulses. The state of the MTJ can be sensed using simple digital CMOS latches, resulting in significant improvement in energy consumption. Moreover, magnetization in the MTJ can be switched on the picoseconds time-scale and our design can operate at a speed of 5 Gb/s for a single link. Index Terms-Magnetic tunnel junction (MTJ), complementary metal-oxide-semiconductor (CMOS), non-equilibrium green's function (NEGF), rare earth (RE)-transition metal (TM) ferrimagnetic materials.

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“…Therefore, should be modified accordingly in order to account for thermal effects. The model in [41] uses a stochastic LLG equation and adds a temperature-dependent fluctuating term to the torque. Furthermore, it uses heat diffusion equation to solve for temperature.…”

Section: E Dynamic Model 5 (Dm5) In Verilog-amentioning

confidence: 99%

A Survey on Circuit Modeling of Spin-Transfer-Torque Magnetic Tunnel Junctions

Vatankhahghadim

Huda

Sheikholeslami

2014

IEEE Trans. Circuits Syst. I

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Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such as spin-transfertorque magnetoresistive random access memory (STT-MRAM) and spin logic circuits such as spin flip flops. This paper reviews several static and dynamic models for the MTJ and compares them for their capabilities and limitations. Furthermore, a Verilog-A model is developed to predict dynamic characteristics of the MTJ. These models are used in simulating a prototype circuit to illustrate their strengths and weaknesses.Index Terms-Magnetic tunnel junction (MTJ), magnetoresistive random-access memory (MRAM), modeling, spin-transfer-torque (STT).

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A framework for simulating hybrid MTJ/CMOS circuits: Atoms to system approach

Cited by 26 publications

References 16 publications

Write-Optimized STT-MRAM Bit-Cells Using Asymmetrically Doped Transistors

Write-Optimized STT-MRAM Bit-Cells Using Asymmetrically Doped Transistors

Laser Induced Magnetization Reversal for Detection in Optical Interconnects

A Survey on Circuit Modeling of Spin-Transfer-Torque Magnetic Tunnel Junctions

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